I-WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Inkcazo ngokubanzi
I-WST2011 MOSFETs zezona transistors ze-P-ch ziphucukileyo ezikhoyo, ezibonisa ukuxinana kweeseli okungenakuthelekiswa nanto. Banikezela ngokusebenza okukhethekileyo, kunye ne-RDSON ephantsi kunye nentlawulo yesango, ezenza zilungele ukutshintshwa kwamandla amancinci kunye nokulayisha ukutshintshwa kwezicelo. Ngaphaya koko, i-WST2011 idibana nemigangatho ye-RoHS kunye neMveliso yoHlaza kwaye iqhayisa ngokuvunywa kokuthembeka kokusebenza okugcweleyo.
Iimbonakalo
Itekhnoloji ye-Advanced Trench ivumela ukuxinana kweeseli eziphezulu, okukhokelela kwiSixhobo esiLuhlaza esine-Super Low Gate Charge kunye ne-CdV/dt egqwesileyo yesiphumo sokwehla.
Usetyenziso
I-high frequency point-of-load i-synchronous encinci yokutshintsha amandla ilungele ukusetyenziswa kwi-MB/NB/UMPC/VGA, inethiwekhi yeenkqubo zamandla ze-DC-DC, ukutshintshwa komthwalo, i-e-cigarettes, abalawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, kunye nombane wabathengi. .
inombolo yezinto ezihambelanayo
KWI-FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Iiparamitha ezibalulekileyo
| Uphawu | Ipharamitha | Ukukala | Iiyunithi | |
| 10s | Ubume ebuzinzile | |||
| VDS | I-Drain-Source Voltage | -20 | V | |
| VGS | Isango-Umthombo weVoltage | ±12 | V | |
| ID@TA=25℃ | I-Drain eqhubekayo yangoku, i-VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | I-Drain eqhubekayo yangoku, i-VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | I-Pulsed Drain yangoku2 | -12 | A | |
| PD@TA=25℃ | Ukuchithwa koMbane ngokupheleleyo3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Ukuchithwa koMbane ngokupheleleyo3 | 1.2 | 0.9 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ | |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ | |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃ , ID=-1mA | --- | -0.011 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=-4.5V , ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS(th) Umlinganiso wobushushu | --- | 3.95 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=-16V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=-5V , ID=-2A | --- | 8.5 | --- | S |
| Qg | Intlawulo yeSango iyonke (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 1.1 | 1.7 | ||
| Qgd | Intlawulo yeSango-Drain | --- | 1.1 | 2.9 | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 9.3 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 15.4 | --- | ||
| Tf | Ixesha Lokuwa | --- | 3.6 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=-15V , VGS=0V , f=1MHz | --- | 750 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 95 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 68 | --- |
