I-WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET Umfanekiso obonakalayo

inkcazelo emfutshane:

Inombolo yoMfanekiso:WSR200N08

BVDSS:80V

RDSON:2.9mΩ

Isazisi:200A

Isitishi:N-ijelo

Umqulu:UKUYA-220-3L

Imveliso yeHlobo:I-WSR200N08 MOSFET inokusingatha ukuya kuthi ga kwi-80 volts kunye ne-200 amps kunye nokumelana ne-2.9 milliohms.Sisixhobo se-N-channel kwaye siza kwiphakheji ye-TO-220-3L.

Usetyenziso:Imidiza ye-elektroniki, iitshaja ezingenazingcingo, iimoto, iinkqubo zokulawula ibhetri, imithombo yamandla egcina amandla, izithuthi zasemoyeni ezingenamntu, izixhobo zempilo, izixhobo zokutshaja iimoto zombane, iiyunithi zolawulo, oomatshini bokushicilela be-3D, izixhobo zombane, izixhobo zombane ezincinci zasekhaya, kunye nezixhobo zombane zabathengi.

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Iinkcukacha zeMveliso

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Inkcazo ngokubanzi

I-WSR200N08 yeyona ndlela iphezulu yokusebenza kwe-N-Ch MOSFET enoxinano oluphezulu lweeseli, ebonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zokuguqula i-buck ehambelanayo.I-WSR200N08 ihlangabezana nemfuneko ye-RoHS kunye neMveliso yoHlaza, i-100% ye-EAS iqinisekisiwe ngokuthembeka okupheleleyo komsebenzi okuvunyiweyo.

Iimbonakalo

Itekhnoloji ephezulu yoxinaniso lweeseli ze-Trench, i-Super Low Gate Charge, i-CdV / dt egqwesileyo isiphumo siyancipha, i-100% i-EAS iqinisekisiwe, i-Green Device Ikhona.

Usetyenziso

Ukutshintsha usetyenziso, uLawulo lwaMandla kwiiNkqubo ze-Inverter, icuba ze-elektroniki, ukutshaja ngaphandle kwamacingo, iimoto, i-BMS, izixhobo zombane ezingxamisekileyo, iidrone, unyango, ukutshaja imoto, abalawuli, abashicileli be-3D, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, umbane wabathengi, njl.

inombolo yezinto ezihambelanayo

I-AO AOT480L, KWI-FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, njl.

Iiparamitha ezibalulekileyo

Iimpawu zoMbane (TJ=25℃, ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	80	V
VGS	Isango-Umthombo wombane	±25	V
ID@TC=25℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	200	A
ID@TC=100℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	144	A
IDM	I-Pulsed Drain yangoku2,TC=25°C	790	A
EAS	Amandla eAvalanche, ipulse enye,L=0.5mH	1496	mJ
IAS	IAvalanche yangoku, ipulse enye,L=0.5mH	200	A
PD@TC=25℃	Ukuchithwa koMbane ngokupheleleyo4	345	W
PD@TC=100℃	Ukuchithwa koMbane ngokupheleleyo4	173	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-175	℃
TJ	Uluhlu lobushushu lweJunction Junction	175	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	80	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃, ID=1mA	---	0.096	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Umlinganiso wobushushu	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=80V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=80V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	3.2	---	Ω
Qg	Iyonke intlawulo yeSango (10V)	VDS=80V , VGS=10V , ID=30A	---	197	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	31	---
Qgd	Intlawulo yeSango-Drain		---	75	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=50V , VGS=10V ,RG=3Ω, ID=30A	---	28	---	ns
Tr	Ixesha lokunyuka		---	18	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	42	---
Tf	Ixesha Lokuwa		---	54	---
Ciss	Igalelo Lobuchule	VDS=15V , VGS=0V , f=1MHz	---	8154	---	pF
Coss	Isakhono sokuPhuma		---	1029	---
Crss	UReverse Transfer Capacitance		---	650	---