I-WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

iimveliso

I-WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

inkcazelo emfutshane:


  • Inombolo yoMfanekiso:I-WSR140N12
  • BVDSS:120V
  • RDSON:5mΩ
  • Isazisi:140A
  • Isitishi:N-ijelo
  • Umqulu:UKUYA-220-3L
  • Imveliso yeHlobo:I-voltage ye-WSR140N12 MOSFET yi-120V, okwangoku yi-140A, ukuchasana ngu-5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-TO-220-3L.
  • Usetyenziso:Unikezelo lwamandla, unyango, izixhobo eziphambili, i-BMS njl.
  • Iinkcukacha zeMveliso

    Isicelo

    Iithegi zeMveliso

    Inkcazo ngokubanzi

    I-WSR140N12 yeyona ndlela iphezulu yokusebenza kwe-N-ch MOSFET enoxinaniso oluphezulu lweeseli, ebonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zokuguqula i-buck.I-WSR140N12 ihlangabezana nemfuneko ye-RoHS kunye neMveliso eluhlaza, i-100% EAS iqinisekisiwe ngokuthembeka okupheleleyo komsebenzi okuvunyiweyo.

    Iimbonakalo

    Itekhnoloji ephezulu yoxinaniso lweeseli ze-Trench, i-Super Low Gate Charge, i-CdV / dt egqwesileyo yokwehla kwesiphumo, i-100% EAS Guaranteed, i-Green Device Ikhona.

    Usetyenziso

    High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Ubonelelo ngombane, unyango, izixhobo ezinkulu, BMS njl.

    inombolo yezinto ezihambelanayo

    STP40NF12 njl.

    Iiparamitha ezibalulekileyo

    Uphawu Ipharamitha Ukukala Iiyunithi
    VDS I-Drain-Source Voltage 120 V
    VGS Isango-Umthombo wombane ±20 V
    ID Utsalo oluqhubekayo lwangoku, VGS @ 10V(TC=25℃) 140 A
    IDM I-Pulsed Drain yangoku 330 A
    EAS I-Single Pulse Avalanche Energy 400 mJ
    PD Ukuchithwa koMbane kukonke... C=25℃) 192 W
    RθJA Ukumelana ne-Thermal, i-junction-ambient 62 ℃/W
    RθJC Ukumelana ne-thermal, i-junction-case 0.65 ℃/W
    TSTG Uluhlu lobushushu boGcino -55 ukuya kwi-150
    TJ Uluhlu lobushushu lweJunction Junction -55 ukuya kwi-150
    Uphawu Ipharamitha Iimeko Min. Isichwethezo. Max. Iyunithi
    BVDSS I-Drain-Source Breakdown Voltage VGS=0V , ID=250uA 120 --- --- V
    I-RDS(ON) Static Drain-Umthombo on-Resistance2 VGS=10V , ID=30A --- 5.0 6.5
    VGS(th) Umbane weSango iThreshold VGS=VDS , ID =250uA 2.0 --- 4.0 V
    IDSS Ukuvuza kweMithombo yangoku VDS=120V , VGS=0V , TJ=25℃ --- --- 1 uA
    IGSS Ukuvuza kweSango-Umthombo ngoku VGS=±20V , VDS=0V --- --- ±100 nA
    Qg Intlawulo yeSango iyonke VDS=50V , VGS=10V , ID=15A --- 68.9 --- nC
    Qgs Intlawulo yeSango-Umthombo --- 18.1 ---
    Qgd Intlawulo yeSango-Drain --- 15.9 ---
    Td(on) Vula Ixesha lokulibaziseka VDD=50V , VGS=10VRG=2Ω,ID=25A --- 30.3 --- ns
    Tr Ixesha lokunyuka --- 33.0 ---
    Td(cima) Ixesha lokulibazisa lokucinywa --- 59.5 ---
    Tf Ixesha Lokuwa --- 11.7 ---
    Ciss Igalelo Lobuchule VDS=50V , VGS=0V , f=1MHz --- 5823 --- pF
    Coss Isakhono sokuPhuma --- 778.3 ---
    Crss UReverse Transfer Capacitance --- 17.5 ---

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