I-WSP6067A N&P-Channel 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSP6067A

BVDSS:60V / -60V

RDSON:38mΩ/80mΩ

Isazisi:7A/-5A

Isitishi:N&P-Channel

Umqulu:I-SOP-8

Imveliso yeHlobo:I-WSP6067A MOSFET inoluhlu lwe-voltage ye-volts ye-60 emihle kunye ne-negative, uluhlu lwangoku lwe-7 amps positive kunye ne-5 amps negative, uluhlu lokumelana ne-38 milliohms kunye ne-80 milliohms, i-N&P-Channel, kwaye ifakwe kwi-SOP-8.

Usetyenziso:I-e-cigarettes, iitshaja ezingenazingcingo, ii-injini, iidrones, ukhathalelo lwempilo, iitshaja zemoto, izilawuli, izixhobo zedijithali, izixhobo zombane ezincinci, kunye ne-electronics zabathengi.

Thumela uMbuzo PDF

Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

Inkcazo ngokubanzi

I-WSP6067A MOSFETs zezona zihambele phambili kakhulu kwitekhnoloji ye-P-ch yomsele, ezinoxinano oluphezulu kakhulu lweeseli. Bahambisa ukusebenza okugqwesileyo ngokwemigaqo ye-RDSON kunye nentlawulo yesango, ilungele uninzi lwabaguquli be-buck synchronous. Ezi MOSFET zihlangabezana nemigaqo ye-RoHS kunye neMveliso yoHlaza, kunye ne-100% EAS eqinisekisa ukuthembeka okupheleleyo kokusebenza.

Iimbonakalo

Ubuchwephesha obukwinqanaba eliphezulu lenza ukwakheka komsele weeseli ezixinana kakhulu, okukhokelela kwintlawulo yesango ephantsi kakhulu kunye nokubola kwesiphumo esiphakamileyo se-CdV/dt. Izixhobo zethu ziza newaranti ye-100% ye-EAS kwaye ihambelana nokusingqongileyo.

Usetyenziso

I-High Frequency Point-of-Load Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, iidrones, izixhobo zonyango, iitshaja zemoto, abalawuli, izixhobo zombane, izixhobo zombane ezincinci zasekhaya, kunye nombane wabathengi. .

inombolo yezinto ezihambelanayo

AOS

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala		Iiyunithi
Uphawu	Ipharamitha	N-Channel	IP-Channel	Iiyunithi
VDS	I-Drain-Source Voltage	60	-60	V
VGS	Isango-Umthombo wombane	±20	±20	V
ID@TC=25℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	7.0	-5.0	A
ID@TC=100℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	4.0	-2.5	A
IDM	I-Pulsed Drain yangoku2	28	-20	A
EAS	I-Single Pulse Avalanche Energy3	22	28	mJ
IAS	IAvalanche yangoku	21	-24	A
PD@TC=25℃	Ukuchithwa koMbane ngokupheleleyo4	2.0	2.0	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150	-55 ukuya kwi-150	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150	-55 ukuya kwi-150	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃ , ID=1mA	---	0.063	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=10V , ID=5A	---	38	52	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=4.5V , ID=4A	---	55	75	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	1	2	3	V
△VGS(th)	VGS(th) Umlinganiso wobushushu	VGS=VDS , ID =250uA	---	-5.24	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=4A	---	28	---	S
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	2.8	4.3	Ω
Qg	Intlawulo yeSango iyonke (4.5V)	VDS=48V , VGS=4.5V , ID=4A	---	19	25	nC
Qgs	Intlawulo yeSango-Umthombo		---	2.6	---
Qgd	Intlawulo yeSango-Drain		---	4.1	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=30V , VGS=10V , RG=3.3Ω, ID=1A	---	3	---	ns
Tr	Ixesha lokunyuka		---	34	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	23	---
Tf	Ixesha Lokuwa		---	6	---
Ciss	Igalelo Lobuchule	VDS=15V , VGS=0V , f=1MHz	---	1027	---	pF
Coss	Isakhono sokuPhuma		---	65	---
Crss	UReverse Transfer Capacitance		---	45	---