I-WSP6067A N&P-Channel 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Inkcazo ngokubanzi
I-WSP6067A MOSFETs zezona zihambele phambili kakhulu kwitekhnoloji ye-P-ch yomsele, ezinoxinano oluphezulu kakhulu lweeseli. Bahambisa ukusebenza okugqwesileyo ngokwemigaqo ye-RDSON kunye nentlawulo yesango, ilungele uninzi lwabaguquli be-buck synchronous. Ezi MOSFET zihlangabezana nemigaqo ye-RoHS kunye neMveliso yoHlaza, kunye ne-100% EAS eqinisekisa ukuthembeka okupheleleyo kokusebenza.
Iimbonakalo
Ubuchwephesha obukwinqanaba eliphezulu lenza ukwakheka komsele weseli oxinana kakhulu, okukhokelela kwintlawulo yesango ephantsi kakhulu kunye nokubola okuphezulu kwe-CdV/dt. Izixhobo zethu ziza newaranti ye-100% ye-EAS kwaye ihambelana nokusingqongileyo.
Usetyenziso
I-High Frequency Point-of-Load Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, iidrones, izixhobo zonyango, iitshaja zemoto, abalawuli, izixhobo zombane, izixhobo zombane ezincinci zasekhaya, kunye nombane wabathengi. .
inombolo yezinto ezihambelanayo
AOS
Iiparamitha ezibalulekileyo
Uphawu | Ipharamitha | Ukukala | Iiyunithi | |
N-Channel | IP-Channel | |||
VDS | I-Drain-Source Voltage | 60 | -60 | V |
VGS | Isango-Umthombo weVoltage | ±20 | ±20 | V |
ID@TC=25℃ | Utsalo oluqhubekayo lwangoku, VGS @ 10V1 | 7.0 | -5.0 | A |
ID@TC=100℃ | Utsalo oluqhubekayo lwangoku, VGS @ 10V1 | 4.0 | -2.5 | A |
IDM | I-Pulsed Drain yangoku2 | 28 | -20 | A |
EAS | I-Single Pulse Avalanche Energy3 | 22 | 28 | mJ |
IAS | IAvalanche yangoku | 21 | -24 | A |
PD@TC=25℃ | Ukuchithwa koMbane ngokupheleleyo4 | 2.0 | 2.0 | W |
TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | -55 ukuya kwi-150 | ℃ |
TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | -55 ukuya kwi-150 | ℃ |
Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
△BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃ , ID=1mA | --- | 0.063 | --- | V/℃ |
I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , ID=5A | --- | 38 | 52 | mΩ |
VGS=4.5V , ID=4A | --- | 55 | 75 | |||
VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =250uA | 1 | 2 | 3 | V |
△VGS(th) | VGS(th) Umlinganiso wobushushu | --- | -5.24 | --- | mV/℃ | |
IDSS | Ukuvuza kweMithombo yangoku | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Phambili Transconductance | VDS=5V , ID=4A | --- | 28 | --- | S |
Rg | Ukunyangwa kweSango | VDS=0V , VGS=0V , f=1MHz | --- | 2.8 | 4.3 | Ω |
Qg | Intlawulo yeSango iyonke (4.5V) | VDS=48V , VGS=4.5V , ID=4A | --- | 19 | 25 | nC |
Qgs | Intlawulo yeSango-Umthombo | --- | 2.6 | --- | ||
Qgd | Intlawulo yeSango-Drain | --- | 4.1 | --- | ||
Td(on) | Vula Ixesha lokulibaziseka | VDD=30V , VGS=10V , RG=3.3Ω, ID=1A | --- | 3 | --- | ns |
Tr | Ixesha lokunyuka | --- | 34 | --- | ||
Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 23 | --- | ||
Tf | Ixesha Lokuwa | --- | 6 | --- | ||
Ciss | Igalelo Lobuchule | VDS=15V , VGS=0V , f=1MHz | --- | 1027 | --- | pF |
Coss | Isakhono sokuPhuma | --- | 65 | --- | ||
Crss | UReverse Transfer Capacitance | --- | 45 | --- |