I-WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

iimveliso

I-WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

inkcazelo emfutshane:


  • Inombolo yoMfanekiso:WSP4888
  • BVDSS:30V
  • RDSON:13.5mΩ
  • Isazisi:9.8A
  • Isitishi:Dual N-Channel
  • Umqulu:I-SOP-8
  • Imveliso yeHlobo:I-voltage ye-WSP4888 MOSFET yi-30V, okwangoku yi-9.8A, ukuchasana yi-13.5mΩ, ishaneli yi-Dual N-Channel, kunye nephakheji yi-SOP-8.
  • Usetyenziso:I-e-cigarettes, iitshaja ezingenazingcingo, ii-injini, iidrones, ukhathalelo lwempilo, iitshaja zemoto, izilawuli, izixhobo zedijithali, izixhobo zombane ezincinci, kunye ne-electronics zabathengi.
  • Iinkcukacha zeMveliso

    Isicelo

    Iithegi zeMveliso

    Inkcazo ngokubanzi

    I-WSP4888 yi-transistor ephezulu ene-dense cell structure, ilungele ukusetyenziswa kwii-synchronous buck converters.Iqhayisa nge-RDSON egqwesileyo kunye neentlawulo zesango, iyenza ibe lolona khetho luphezulu kwezi zicelo.Ukongeza, i-WSP4888 ihlangabezana neemfuno ze-RoHS kunye neMveliso yoHlaza kwaye iza nesiqinisekiso se-100% se-EAS somsebenzi othembekileyo.

    Iimbonakalo

    ITekhnoloji ye-Advanced Trench ibonakalisa ukuxinana kweeseli eziphezulu kunye nentlawulo yesango ephantsi kakhulu, inciphisa kakhulu isiphumo se-CdV/dt.Izixhobo zethu ziza ne-100% yesiqinisekiso se-EAS kunye nokukhethwa kokusingqongileyo.

    Ii-MOSFET zethu zifumana imilinganiselo engqongqo yolawulo lomgangatho ukuqinisekisa ukuba ziyahlangabezana neyona migangatho iphezulu yoshishino.Iyunithi nganye ivavanywa ngokucokisekileyo ekusebenzeni, ukuqina kunye nokuthembeka, ukuqinisekisa ubomi obude bemveliso.Uyilo lwayo olumagingxigingxi luyenza ikwazi ukumelana neemeko ezigqithisileyo zokusebenza, iqinisekisa ukusebenza kwesixhobo esingaphazanyiswa.

    Amaxabiso akhuphisanayo: Ngaphandle komgangatho wazo ophakamileyo, ii-MOSFET zethu zinexabiso eliphezulu kakhulu, zibonelela ngogcino lweendleko ezibalulekileyo ngaphandle kokubeka esichengeni ukusebenza.Sikholelwa ukuba bonke abathengi kufuneka bafikelele kwiimveliso ezikumgangatho ophezulu, kwaye isicwangciso sethu samaxabiso sibonisa oku kuzibophelela.

    Ukuhambelana okubanzi: Ii-MOSFET zethu ziyahambelana neenkqubo ezahlukeneyo ze-elektroniki, zizenza ukhetho oluguquguqukayo lwabavelisi kunye nabasebenzisi bokugqibela.Idibanisa ngokungenamthungo kwiinkqubo ezikhoyo, iphucula ukusebenza ngokubanzi ngaphandle kokufuna ukuguqulwa koyilo olukhulu.

    Usetyenziso

    High Frequency Point-of-Load Buck Converter Synchronous ukusetyenziswa kwiinkqubo MB/NB/UMPC/VGA, Networking DC-DC Power Systems, Load Switches, E-cigarettes, Wireless Chargers, Motors, Drones, Izixhobo zonyango, Iitshaja zemoto, abalawuli , IiMveliso zeDijithali, iziXhobo eziNcinane zaseKhaya, kunye ne-Electronics yabathengi.

    inombolo yezinto ezihambelanayo

    AOS AO4832 AO4838 AO4914,ON NTMS4916N,VISHAY Si4128DY,INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936,ruichips RU30D10

    Iiparamitha ezibalulekileyo

    Uphawu Ipharamitha Ukukala Iiyunithi
    VDS I-Drain-Source Voltage 30 V
    VGS Isango-Umthombo wombane ±20 V
    ID@TC=25℃ Utsalo oluqhubekayo lwangoku, VGS @ 10V1 9.8 A
    ID@TC=70℃ Utsalo oluqhubekayo lwangoku, VGS @ 10V1 8.0 A
    IDM I-Pulsed Drain yangoku2 45 A
    EAS I-Single Pulse Avalanche Energy3 25 mJ
    IAS IAvalanche yangoku 12 A
    PD@TA=25℃ Ukuchithwa koMbane ngokupheleleyo4 2.0 W
    TSTG Uluhlu lobushushu boGcino -55 ukuya kwi-150
    TJ Uluhlu lobushushu lweJunction Junction -55 ukuya kwi-150
    Uphawu Ipharamitha Iimeko Min. Isichwethezo. Max. Iyunithi
    BVDSS I-Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
    △BVDSS/△TJ I-Coefficient yoBubushushu be-BVDSS Isalathiso ku-25℃ , ID=1mA --- 0.034 --- V/℃
    I-RDS(ON) Static Drain-Umthombo on-Resistance2 VGS=10V , ID=8.5A --- 13.5 18
           
        VGS=4.5V , ID=5A --- 18 25  
    VGS(th) Umbane weSango iThreshold VGS=VDS , ID =250uA 1.5 1.8 2.5 V
               
    △VGS(th) VGS(th) Umlinganiso wobushushu   --- -5.8 --- mV/℃
    IDSS Ukuvuza kweMithombo yangoku VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA
           
        VDS=24V , VGS=0V , TJ=55℃ --- --- 5  
    IGSS Ukuvuza kweSango-Umthombo ngoku VGS=±20V , VDS=0V --- --- ±100 nA
    gfs Phambili Transconductance VDS=5V , ID=8A --- 9 --- S
    Rg Ukunyangwa kweSango VDS=0V , VGS=0V , f=1MHz --- 1.8 2.9 Ω
    Qg Intlawulo yeSango iyonke (4.5V) VDS=15V , VGS=4.5V , ID=8.8A --- 6 8.4 nC
    Qgs Intlawulo yeSango-Umthombo --- 1.5 ---
    Qgd Intlawulo yeSango-Drain --- 2.5 ---
    Td(on) Vula Ixesha lokulibaziseka VDD=15V , VGEN=10V , RG=6Ω

    I-ID=1A,RL=15Ω

    --- 7.5 9.8 ns
    Tr Ixesha lokunyuka --- 9.2 19
    Td(cima) Ixesha lokulibazisa lokucinywa --- 19 34
    Tf Ixesha Lokuwa --- 4.2 8
    Ciss Igalelo Lobuchule VDS=15V , VGS=0V , f=1MHz --- 590 701 pF
    Coss Isakhono sokuPhuma --- 98 112
    Crss UReverse Transfer Capacitance --- 59 91

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