I-WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:WSP4888

BVDSS:30V

RDSON:13.5mΩ

Isazisi:9.8A

Isitishi:Dual N-Channel

Umqulu:I-SOP-8

Imveliso yeHlobo:I-voltage ye-WSP4888 MOSFET yi-30V, okwangoku yi-9.8A, ukuchasana yi-13.5mΩ, ishaneli yi-Dual N-Channel, kunye nephakheji yi-SOP-8.

Usetyenziso:I-e-cigarettes, iitshaja ezingenazingcingo, ii-injini, iidrone, ukhathalelo lwempilo, iitshaja zemoto, izilawuli, izixhobo zedijithali, izixhobo zombane ezincinci, kunye nombane kubathengi.

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Iinkcukacha zeMveliso

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Iithegi zeMveliso

Inkcazo ngokubanzi

I-WSP4888 yi-transistor ephezulu ene-dense cell structure, ilungele ukusetyenziswa kwii-synchronous buck converters. Iqhayisa nge-RDSON egqwesileyo kunye neentlawulo zesango, iyenza ibe lolona khetho luphezulu kwezi zicelo. Ukongeza, i-WSP4888 ihlangabezana neemfuno ze-RoHS kunye neMveliso yoHlaza kwaye iza nesiqinisekiso se-100% se-EAS somsebenzi othembekileyo.

Iimbonakalo

ITekhnoloji ye-Advanced Trench ibonakalisa ukuxinana kweeseli eziphezulu kunye nentlawulo yesango ephantsi kakhulu, inciphisa kakhulu isiphumo se-CdV/dt. Izixhobo zethu ziza ne-100% yesiqinisekiso se-EAS kunye nokukhethwa kokusingqongileyo.

Ii-MOSFET zethu zifumana imilinganiselo engqongqo yolawulo lomgangatho ukuqinisekisa ukuba ziyahlangabezana neyona migangatho iphezulu yoshishino. Iyunithi nganye ivavanywa ngokucokisekileyo ekusebenzeni, ukuqina kunye nokuthembeka, ukuqinisekisa ubomi obude bemveliso. Uyilo lwayo olumagingxigingxi luyenza ikwazi ukumelana neemeko ezigqithisileyo zokusebenza, iqinisekisa ukusebenza kwesixhobo esingaphazanyiswa.

Amaxabiso akhuphisanayo: Ngaphandle komgangatho wazo ophakamileyo, ii-MOSFET zethu zinexabiso eliphezulu kakhulu, zibonelela ngogcino lweendleko ezibalulekileyo ngaphandle kokubeka esichengeni ukusebenza. Sikholelwa ukuba bonke abathengi kufuneka bafikelele kwiimveliso ezikumgangatho ophezulu, kwaye isicwangciso sethu samaxabiso sibonisa oku kuzibophelela.

Ukuhambelana okubanzi: Ii-MOSFET zethu ziyahambelana neenkqubo ezahlukeneyo zombane, nto leyo ezenza zibe lukhetho oluguquguqukayo kubenzi kunye nabasebenzisi bokugqibela. Idibanisa ngokungenamthungo kwiinkqubo ezikhoyo, iphucula ukusebenza ngokubanzi ngaphandle kokufuna ukuguqulwa koyilo olukhulu.

Usetyenziso

High Frequency Point-of-Load Buck Converter Synchronous ukusetyenziswa kwiinkqubo MB/NB/UMPC/VGA, Networking DC-DC Power Systems, Load Switches, E-cigarettes, Wireless Chargers, Motors, Drones, Izixhobo zonyango, Itshaja zemoto, abalawuli , IiMveliso zeDijithali, iziXhobo eziNcinane zaseKhaya, kunye ne-Electronics yabathengi.

inombolo yezinto ezihambelanayo

AOS AO4832 AO4838 AO4914,ON NTMS4916N,VISHAY Si4128DY,INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936,ruichips RU30D10

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	30	V
VGS	Isango-Umthombo weVoltage	±20	V
ID@TC=25℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	9.8	A
ID@TC=70℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	8.0	A
IDM	I-Pulsed Drain yangoku2	45	A
EAS	I-Single Pulse Avalanche Energy3	25	mJ
IAS	IAvalanche yangoku	12	A
PD@TA=25℃	Ukuchithwa koMbane ngokupheleleyo4	2.0	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃ , ID=1mA	---	0.034	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=10V , ID=8.5A	---	13.5	18	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2					mΩ
		VGS=4.5V , ID=5A	---	18	25
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	1.5	1.8	2.5	V
		VGS=VDS , ID =250uA
△VGS(th)	VGS(th) Umlinganiso wobushushu		---	-5.8	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku					uA
		VDS=24V , VGS=0V , TJ=55℃	---	---	5
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=8A	---	9	---	S
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	1.8	2.9	Ω
Qg	Intlawulo yeSango iyonke (4.5V)	VDS=15V , VGS=4.5V , ID=8.8A	---	6	8.4	nC
Qgs	Intlawulo yeSango-Umthombo		---	1.5	---
Qgd	Intlawulo yeSango-Drain		---	2.5	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=15V , VGEN=10V , RG=6Ω I-ID=1A,RL=15Ω	---	7.5	9.8	ns
Tr	Ixesha lokunyuka		---	9.2	19
Td(cima)	Ixesha lokulibazisa lokucinywa		---	19	34
Tf	Ixesha Lokuwa		---	4.2	8
Ciss	Igalelo Lobuchule	VDS=15V , VGS=0V , f=1MHz	---	590	701	pF
Coss	Isakhono sokuPhuma		---	98	112
Crss	UReverse Transfer Capacitance		---	59	91