I-WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:WSP4447

BVDSS:-40V

RDSON:13mΩ

Isazisi:-11A

Isitishi:IP-Channel

Umqulu:I-SOP-8

Imveliso yeHlobo:I-voltage ye-WSP4447 MOSFET yi-40V, okwangoku yi-11A, ukuchasana ngu-13mΩ, ishaneli yi-P-Channel, kunye nephakheji yi-SOP-8.

Usetyenziso:Imidiza yombane, iitshaja ezingenazingcingo, iimotho, iidrone, izixhobo zonyango, iitshaja ezizisebenzelayo, izilawuli, iimveliso zedijithali, izixhobo zombane ezincinci, kunye nombane wabathengi.

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Inkcazo ngokubanzi

I-WSP4447 yi-MOSFET eqhuba kakuhle kakhulu esebenzisa iteknoloji yomsele kwaye inoxinaniso oluphezulu lweeseli.Ibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango, iyenza ilungele ukusetyenziswa kwizicelo ezininzi zokuguqula i-buck.I-WSP4447 idibana nemigangatho ye-RoHS kunye neMveliso yoHlaza, kwaye iza ne-100% isiqinisekiso se-EAS sokuthembeka okupheleleyo.

Iimbonakalo

Itekhnoloji ye-Advanced Trench ivumela ukuxinana kweeseli eziphezulu, okukhokelela kwiSixhobo esiLuhlaza esine-Super Low Gate Charge kunye nesiphumo esihle kakhulu se-CdV/dt.

Usetyenziso

Uguqulo oluPhezulu lweFrequency kwiindidi ezahlukeneyo ze-Electronics
Esi siguquli senzelwe ukunika amandla ngokufanelekileyo uluhlu olubanzi lwezixhobo, kubandakanya iilaptops, izixhobo zokudlala, izixhobo zothungelwano, i-e-cigarettes, iitshaja ezingenazingcingo, iimotor, iidrones, izixhobo zonyango, iitshaja zemoto, abalawuli, iimveliso zedijithali, izixhobo ezincinci zasekhaya kunye nabathengi. izinto zombane.

inombolo yezinto ezihambelanayo

AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421,Sinopower SM4403PSK，RUICHIPS RU40L10H.

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	-40	V
VGS	Isango-Umthombo wombane	±20	V
ID@TA=25℃	Continuous Drin yangoku, VGS @ -10V1	-11	A
ID@TA=70℃	Continuous Drin yangoku, VGS @ -10V1	-9.0	A
IDM a	300µs Ukutsalwa kweMithi yangoku (VGS=-10V)	-44	A
I-EAS b	Amandla eAvalanche, ipulse enye (L=0.1mH)	54	mJ
IAS b	IAvalanche yangoku, ipulse enye (L=0.1mH)	-33	A
PD@TA=25℃	Ukuchithwa koMbane ngokupheleleyo4	2.0	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃ , ID=-1mA	---	-0.018	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=-10V , ID=-13A	---	13	16	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2					mΩ
		VGS=-4.5V , ID=-5A	---	18	26
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =-250uA	-1.4	-1.9	-2.4	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Umlinganiso wobushushu		---	5.04	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=-32V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Ukuvuza kweMithombo yangoku					uA
		VDS=-32V , VGS=0V , TJ=55℃	---	---	-5
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=-5V , ID=-10A	---	18	---	S
Qg	Intlawulo yeSango iyonke (-4.5V)	VDS=-20V , VGS=-10V , ID=-11A	---	32	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	5.2	---
Qgd	Intlawulo yeSango-Drain		---	8	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	14	---	ns
Tr	Ixesha lokunyuka		---	12	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	41	---
Tf	Ixesha Lokuwa		---	22	---
Ciss	Igalelo Lobuchule	VDS=-15V , VGS=0V , f=1MHz	---	1500	---	pF
Coss	Isakhono sokuPhuma		---	235	---
Crss	UReverse Transfer Capacitance		---	180	---