I-WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET
Inkcazo ngokubanzi
I-WSP4099 ngumsele onamandla we-P-ch MOSFET enoxinano oluphezulu lweeseli. Ihambisa i-RDSON egqwesileyo kunye nentlawulo yesango, iyenza ilungele uninzi lwezicelo zokuguqula i-buck. Idibana nemigangatho ye-RoHS kunye ne-GreenProduct kwaye ine-100% isiqinisekiso se-EAS esinemvume epheleleyo yokuthembeka komsebenzi.
Iimbonakalo
Advanced Trench Technology enoxinaniso lweeseli eziphakamileyo, intlawulo yesango ephantsi kakhulu, iCdV/dt egqwesileyo yokubola kwesiphumo kunye nesiqinisekiso se-100% EAS zizo zonke iimpawu zezixhobo zethu eziluhlaza ezifumaneka lula.
Usetyenziso
I-High Frequency Point-of-Load Buck Converter ye-MB/NB/UMPC/VGA, iNethiwekhi ye-DC-DC Power System, i-Load switch, i-E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, iidrones, unyango, iitshaja zemoto, abalawuli, iimveliso zedijithali. , izixhobo zombane ezincinci zasekhaya, kunye ne-elektroniki yabathengi.
inombolo yezinto ezihambelanayo
KWI-FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A,Sinopower SM4405BSK,dintek DTM4807,ruichips RU40S4H.
Iiparamitha ezibalulekileyo
Uphawu | Ipharamitha | Ukukala | Iiyunithi |
VDS | I-Drain-Source Voltage | -40 | V |
VGS | Isango-Umthombo weVoltage | ±20 | V |
ID@TC=25℃ | Utsalo oluqhubekayo lwangoku, -VGS @ -10V1 | -6.5 | A |
ID@TC=100℃ | Utsalo oluqhubekayo lwangoku, -VGS @ -10V1 | -4.5 | A |
IDM | I-Pulsed Drain yangoku2 | -22 | A |
EAS | I-Single Pulse Avalanche Energy3 | 25 | mJ |
IAS | IAvalanche yangoku | -10 | A |
PD@TC=25℃ | Ukuchithwa koMbane ngokupheleleyo4 | 2.0 | W |
TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
△BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃ , ID=-1mA | --- | -0.02 | --- | V/℃ |
I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=-10V , ID=-6.5A | --- | 30 | 38 | mΩ |
VGS=-4.5V , ID=-4.5A | --- | 46 | 62 | |||
VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =-250uA | -1.5 | -2.0 | -2.5 | V |
△VGS(th) | VGS(th) Umlinganiso wobushushu | --- | 3.72 | --- | V/℃ | |
IDSS | Ukuvuza kweMithombo yangoku | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Phambili Transconductance | VDS=-5V , ID=-4A | --- | 8 | --- | S |
Qg | Intlawulo yeSango iyonke (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-6.5A | --- | 7.5 | --- | nC |
Qgs | Intlawulo yeSango-Umthombo | --- | 2.4 | --- | ||
Qgd | Intlawulo yeSango-Drain | --- | 3.5 | --- | ||
Td(on) | Vula Ixesha lokulibaziseka | VDD=-15V , VGS=-10V , RG=6Ω, I-ID=-1A ,RL=20Ω | --- | 8.7 | --- | ns |
Tr | Ixesha lokunyuka | --- | 7 | --- | ||
Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 31 | --- | ||
Tf | Ixesha Lokuwa | --- | 17 | --- | ||
Ciss | Igalelo Lobuchule | VDS=-15V , VGS=0V , f=1MHz | --- | 668 | --- | pF |
Coss | Isakhono sokuPhuma | --- | 98 | --- | ||
Crss | UReverse Transfer Capacitance | --- | 72 | --- |