I-WSP4088 N-channel 40V 11A SOP-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:WSP4088

BVDSS:40V

RDSON:13mΩ

Isazisi:11A

Isitishi:N-ijelo

Umqulu:I-SOP-8

Imveliso yeHlobo:I-voltage ye-WSP4088 MOSFET yi-40V, okwangoku yi-11A, ukuchasana yi-13mΩ, ishaneli yi-N-channel, kunye nephakheji yi-SOP-8.

Usetyenziso:Imidiza yombane, ukutshaja ngaphandle kwamacingo, iimotha, iidrone, ezonyango, ukutshaja imoto, izilawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, ii-elektroniki zabathengi, njl.

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Inkcazo ngokubanzi

I-WSP4088 yeyona ndawo iphezulu yokusebenza komsele we-N-channel MOSFET enoxinaniso lweeseli oluphezulu kakhulu olubonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kwezona zicelo zininzi ze-synchronous buck converter. I-WSP4088 ihambelana ne-RoHS kunye neemfuno zemveliso eluhlaza, isiqinisekiso se-100% EAS, ukuthembeka okupheleleyo komsebenzi okuvunyiweyo.

Iimbonakalo

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Usetyenziso

Ulawulo lwaMandla kwiDesktop yeKhompyutha okanye kwi-DC/DC Converters,Isigarethi ze-elektroniki, ukutshaja ngaphandle kwamacingo, iimotor, iidrones, unyango, ukutshaja imoto, abalawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, umbane wabathengi, njl.

inombolo yezinto ezihambelanayo

AO AO4884 AO4882,ON FDS4672A,PANJIT PJL9424,DINTEK DTM4916 njl.

Iiparamitha ezibalulekileyo

Awona Maqondo Awona Maphezulu (TA = 25 C Ngaphandle kokuba Kuqatshelwe Ngenye indlela)

Uphawu	Ipharamitha		Ukukala	Iyunithi
Amanqaku aqhelekileyo
VDSS	I-Drain-Source Voltage		40	V
VGSS	Isango-Umthombo weVoltage		±20	V
TJ	Ubushushu obuphezulu beJunction		150	°C
TSTG	Uluhlu lobushushu boGcino		-55 ukuya kwi-150	°C
IS	I-Diode eqhubekayo ngoku	TA=25°C	2	A
ID	Ukukhupha amanzi ngokuqhubekayo	TA=25°C	11	A
ID	Ukukhupha amanzi ngokuqhubekayo	TA=70°C	8.4
IDM a	I-Pulsed Drain yangoku	TA=25°C	30
PD	Ukuchithwa kwamandla aphezulu	TA=25°C	2.08	W
PD	Ukuchithwa kwamandla aphezulu	TA=70°C	1.3	W
RqJA	I-Thermal Resistance-Junction ukuya kwi-Ambient	t £10s	30	°C/W
RqJA	I-Thermal Resistance-Junction ukuya kwi-Ambient	Ubume ebuzinzile	60
RqJL	I-Thermal Resistance-Junction to Lead	Ubume ebuzinzile	20
IAS b	I-Avalanche yangoku, i-pulse enye	L=0.1mH	23	A
I-EAS b	Amandla e-Avalanche, i-pulse enye	L=0.1mH	26	mJ

Qaphela:Max. okwangoku kukhawulelwe ngocingo lokubopha.
Qaphela b:I-UIS ivavanyiwe kwaye ububanzi be-pulse bukhawulelwe ngobushushu obuphezulu be-junction 150oC (ubushushu bokuqala Tj=25oC).

Iimpawu zoMbane (TA = 25 C Ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Iimeko zovavanyo		Min.	Isichwethezo.	Max.	Iyunithi
Iimpawu ezimileyo
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	I-Zero Gate ye-Volt Drain yangoku	VDS=32V, VGS=0V		-	-	1	mA
IDSS	I-Zero Gate ye-Volt Drain yangoku		TJ=85°C	-	-	30	mA
VGS(th)	Umbane weSango iThreshold	VDS=VGS, IDS=250mA		1.5	1.8	2.5	V
IGSS	Ukuvuza kweSango ngoku	VGS=±20V, VDS=0V		-	-	±100	nA
I-RDS(ON) c	I-Drain-Source kwi-State Resistance	VGS=10V, IDS=7A		-	10.5	13	mW
			TJ=125°C	-	15.75	-
		VGS=4.5V, IDS=5A		-	12	16
Gfs	Phambili Transconductance	VDS=5V, IDS=15A		-	31	-	S
Iimpawu zeDiode
VSD c	Diode Forward Voltage	ISD=10A, VGS=0V		-	0.9	1.1	V
trr	Ixesha lokuBuyisa umva	VDD=20V,ISD=10A, dlSD/dt=100A/ms		-	15.2	-	ns
ta	Ixesha lokuTyala			-	9.4	-
tb	Ixesha lokukhupha			-	5.8	-
Qrr	Intlawulo yokuBuyisa umva			-	9.5	-	nC
Iimpawu eziGuquzelayo d
RG	Ukunyangwa kweSango	VGS=0V,VDS=0V,F=1MHz		0.7	1.1	1.8	W
Ciss	Igalelo Lobuchule	VGS=0V,VDS=20V,Frequency=1.0MHz		-	1125	-	pF
Coss	Isakhono sokuPhuma			-	132	-
Crss	UReverse Transfer Capacitance			-	70	-
td(ON)	Layita Ixesha lokulibaziseka	VDD=20V, RL=20W,IDS=1A, VGEN=10V, RG=1W		-	12.6	-	ns
tr	Layita Ixesha lokuKhuphuka			-	10	-
td(OFF)	Ukucinywa kwexesha lokulibazisa			-	23.6	-
tf	Ukucima ixesha lekwindla			-	6	-
Iimpawu zokuTyala kweSango d
Qg	Intlawulo yeSango iyonke	VDS=20V, VGS=4.5V, IDS=7A		-	9.4	-	nC
Qg	Intlawulo yeSango iyonke	VDS=20V, VGS=10V, IDS=7A		-	20	28
Qgth	Intlawulo yeSango iThreshold			-	2	-
Qgs	Intlawulo yeSango-Umthombo			-	3.9	-
Qgd	Intlawulo yeSango-Drain			-	3	-