I-WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSM340N10G

BVDSS:100V

RDSON:1.6mΩ

Isazisi:340A

Isitishi:N-ijelo

Umqulu:UMTHETHO-8L

Imveliso yeHlobo:I-voltage ye-WSM340N10G MOSFET yi-100V, okwangoku yi-340A, ukuchasana yi-1.6mΩ, ishaneli yi-N-channel, kunye nephakheji yi-TOLL-8L.

Usetyenziso:Izixhobo zonyango, iidrones, izixhobo zombane zePD, izixhobo zombane ze-LED, izixhobo zamashishini, njl.

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Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

Inkcazo ngokubanzi

I-WSM340N10G yeyona nto iphezulu yokusebenza komsele we-N-Ch MOSFET enoxinaniso oluphezulu lweeseli, olubonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zoguqulo lwe-buck synchronous. I-WSM340N10G ihlangabezana nemfuno ye-RoHS kunye neMveliso eluhlaza, i-100% EAS iqinisekisiwe ngokuthembeka okupheleleyo komsebenzi okuvunyiweyo.

Iimbonakalo

Ubuchwephesha obuphezulu be-cell density Trench technology, i-Super Low Gate Charge, i-Excellent CdV/dt effect yehla, i-100% EAS Guaranteed, i-Green Device Ikhona.

Usetyenziso

Ukulungiswa kwe-synchronous, i-DC/DC Converter, Ukutshintsha komthwalo, Izixhobo zonyango, iidrone, izixhobo zombane zePD, izixhobo zombane ze-LED, izixhobo zoshishino, njl.

Iiparamitha ezibalulekileyo

IiReyithingi eziphezulu ezipheleleyo

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	100	V
VGS	Isango-Umthombo weVoltage	±20	V
ID@TC=25℃	Continuous Drin yangoku, VGS @ 10V	340	A
ID@TC=100℃	Continuous Drin yangoku, VGS @ 10V	230	A
IDM	Umjelo otsaliweyo wangoku..TC=25°C	1150	A
EAS	Amandla eAvalanche, ipulse enye,L=0.5mH	1800	mJ
IAS	IAvalanche yangoku, ipulse enye,L=0.5mH	120	A
PD@TC=25℃	Ukuchithwa kwamandla ngokupheleleyo	375	W
PD@TC=100℃	Ukuchithwa kwamandla ngokupheleleyo	187	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-175	℃
TJ	Uluhlu lobushushu lweJunction Junction	175	℃

Iimpawu zoMbane (TJ=25℃, ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	100	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃, ID=1mA	---	0.096	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Umlinganiso wobushushu	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=85V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=85V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Iyonke intlawulo yeSango (10V)	VDS=50V , VGS=10V , ID=50A	---	260	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	80	---
Qgd	Intlawulo yeSango-Drain		---	60	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Ixesha lokunyuka		---	50	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	228	---
Tf	Ixesha Lokuwa		---	322	---
Ciss	Igalelo Lobuchule	VDS=40V , VGS=0V , f=1MHz	---	13900	---	pF
Coss	Isakhono sokuPhuma		---	6160	---
Crss	UReverse Transfer Capacitance		---	220	---