I-WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSM320N04G

BVDSS:40V

RDSON:1.2mΩ

Isazisi:320A

Isitishi:N-ijelo

Umqulu:UMTHETHO-8L

Imveliso yeHlobo:I-WSM320N04G MOSFET ine-voltage ye-40V, yangoku ye-320A, ukuchasana kwe-1.2mΩ, i-N-channel, kunye ne-TOLL-8L iphakheji.

Usetyenziso:Imidiza yombane, ukutshaja ngaphandle kwamacingo, iidroni, unyango, ukutshaja imoto, izilawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, i-elektroniki yabathengi.

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Inkcazo ngokubanzi

I-WSM320N04G yi-MOSFET esebenza kakhulu esebenzisa uyilo lomsele kwaye inoxinaniso oluphezulu kakhulu lweeseli. Ine-RDSON egqwesileyo kunye nentlawulo yesango kwaye ifanelekile kwizicelo ezininzi zokuguqula i-buck. I-WSM320N04G ihlangabezana neemfuno ze-RoHS kunye neMveliso eluhlaza kwaye iqinisekisiwe ukuba ibe ne-100% EAS kunye nokuthembeka okupheleleyo komsebenzi.

Iimbonakalo

Itekhnoloji ephezulu yoxinaniso lweeseli zeTrench, ngelixa ikwabonisa intlawulo yesango ephantsi yokusebenza kakuhle. Ukongeza, iqhayisa ngesiphumo esihle kakhulu se-CdV/dt, isiqinisekiso se-EAS esiyi-100% kunye nenketho ehambelana nendalo.

Usetyenziso

High Frequency Point-of-Load Buck Converter Synchronous, Networking DC-DC Power System, Power Tool Application, Electronic cigarettes, wireless charger, drones, medical, car charger, controllers, digital products, small house devices, and consumer electronics.

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	40	V
VGS	Isango-Umthombo weVoltage	±20	V
ID@TC=25℃	Continuous Drin yangoku, VGS @ 10V1,7	320	A
ID@TC=100℃	Continuous Drin yangoku, VGS @ 10V1,7	192	A
IDM	I-Pulsed Drain yangoku2	900	A
EAS	I-Single Pulse Avalanche Energy3	980	mJ
IAS	IAvalanche yangoku	70	A
PD@TC=25℃	Ukuchithwa koMbane ngokupheleleyo4	250	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-175	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-175	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	40	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃, ID=1mA	---	0.050	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=10V , ID=25A	---	1.2	1.5	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=4.5V , ID=20A	---	1.7	2.5	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Umlinganiso wobushushu	VGS=VDS , ID =250uA	---	-6.94	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=40V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=40V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=50A	---	160	---	S
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Iyonke intlawulo yeSango (10V)	VDS=20V , VGS=10V , ID=25A	---	130	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	43	---
Qgd	Intlawulo yeSango-Drain		---	83	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A.	---	30	---	ns
Tr	Ixesha lokunyuka		---	115	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	95	---
Tf	Ixesha Lokuwa		---	80	---
Ciss	Igalelo Lobuchule	VDS=20V , VGS=0V , f=1MHz	---	8100	---	pF
Coss	Isakhono sokuPhuma		---	1200	---
Crss	UReverse Transfer Capacitance		---	800	---