WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSF70P02

BVDSS:-20V

RDSON:6.8mΩ

Isazisi:-70A

Isitishi:IP-Channel

Umqulu:UKUYA-252

Imveliso yeHlobo:I-WSF70P02 MOSFET ine-voltage ye-20V, yangoku -70A, ukuchasana kwe-6.8mΩ, i-P-Channel, kunye ne-TO-252 yokupakisha.

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Inkcazo ngokubanzi

I-WSF70P02 MOSFET sesona sixhobo somsele se-P esisebenza kakhulu esinoxinano oluphezulu lweeseli.Ibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kwezona zicelo zininzi ze-synchronous buck converter.Isixhobo sihlangabezana neemfuno ze-RoHS kunye ne-Green Product, i-100% EAS iqinisekisiwe, kwaye ivunyiwe ukuthembeka okupheleleyo komsebenzi.

Iimbonakalo

Advanced Trench Technology enoxinaniso lweeseli eziphezulu, intlawulo yesango ephantsi kakhulu, ukucuthwa okugqwesileyo kwesiphumo se-CdV/dt, isiqinisekiso se-100% se-EAS, kunye nokhetho lwezixhobo ezilungele ukusingqongileyo.

Usetyenziso

Indawo yoMlayisho oPhakamileyo, iBuck Converter yeMB/NB/UMPC/VGA ,Inethiwekhi ye-DC-DC Power System,Tshintsho loMlayisho,I-E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, izixhobo zombane zikaxakeka, iidrone, unyango, itshaja zemoto. , abalawuli, iimveliso zedijithali, izixhobo zekhaya ezincinci, i-electronics yabathengi.

inombolo yezinto ezihambelanayo

AOS

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala		Iiyunithi
		10s	Ubume ebuzinzile
VDS	I-Drain-Source Voltage	-20		V
VGS	Isango-Umthombo wombane	±12		V
ID@TC=25℃	Continuous Drin yangoku, VGS @ -10V1	-70		A
ID@TC=100℃	Continuous Drin yangoku, VGS @ -10V1	-36		A
IDM	I-Pulsed Drain yangoku2	-200		A
EAS	I-Single Pulse Avalanche Energy3	360		mJ
IAS	IAvalanche yangoku	-55.4		A
PD@TC=25℃	Ukuchithwa koMbane ngokupheleleyo4	80		W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150		℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150		℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃ , ID=-1mA	---	-0.018	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=-4.5V , ID=-15A	---	6.8	9.0	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2					mΩ
		VGS=-2.5V , ID=-10A	---	8.2	11
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.2	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Umlinganiso wobushushu		---	2.94	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=-20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	5
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±12V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=-5V , ID=-10A	---	45	---	S
Qg	Intlawulo yeSango iyonke (-4.5V)	VDS=-15V , VGS=-4.5V , ID=-10A	---	63	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	9.1	---
Qgd	Intlawulo yeSango-Drain		---	13	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Ixesha lokunyuka		---	77	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	195	---
Tf	Ixesha Lokuwa		---	186	---
Ciss	Igalelo Lobuchule	VDS=-10V , VGS=0V , f=1MHz	---	5783	---	pF
Coss	Isakhono sokuPhuma		---	520	---
Crss	UReverse Transfer Capacitance		---	445	---