I-WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
Inkcazo ngokubanzi
I-WSF6012 MOSFET sisixhobo esisebenza kakhulu esinoyilo oluxinana kakhulu lweeseli. Ibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango efanelekileyo kwezona zicelo zininzi zoguqulo lwe-buck. Ukongeza, ihlangabezana neemfuno ze-RoHS kunye neMveliso eluhlaza, kwaye iza ne-100% isiqinisekiso se-EAS sokusebenza ngokupheleleyo kunye nokuthembeka.
Iimbonakalo
Advanced Trench Technology kunye High Cell Density, Super Low Gate Charge, Excellent CdV/dt Effect Decline, 100% EAS Guarantee, kunye noKhetho lweSixhobo esisiSingqongileyo.
Usetyenziso
I-High Frequency Point-of-Load Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, umbane ongxamisekileyo, iidrones, impilo, iitshaja zeemoto, abalawuli, izixhobo zedijithali, izixhobo ezincinci zasekhaya, kunye nee-elektroniki zabathengi.
inombolo yezinto ezihambelanayo
I-AOS AOD603A,
Iiparamitha ezibalulekileyo
Uphawu | Ipharamitha | Ukukala | Iiyunithi | |
N-Channel | IP-Channel | |||
VDS | I-Drain-Source Voltage | 60 | -60 | V |
VGS | Isango-Umthombo weVoltage | ±20 | ±20 | V |
ID@TC=25℃ | Utsalo oluqhubekayo lwangoku, VGS @ 10V1 | 20 | -15 | A |
ID@TC=70℃ | Utsalo oluqhubekayo lwangoku, VGS @ 10V1 | 15 | -10 | A |
IDM | I-Pulsed Drain yangoku2 | 46 | -36 | A |
EAS | I-Single Pulse Avalanche Energy3 | 200 | 180 | mJ |
IAS | IAvalanche yangoku | 59 | -50 | A |
PD@TC=25℃ | Ukuchithwa koMbane ngokupheleleyo4 | 34.7 | 34.7 | W |
TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | -55 ukuya kwi-150 | ℃ |
TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | -55 ukuya kwi-150 | ℃ |
Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
△BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃ , ID=1mA | --- | 0.063 | --- | V/℃ |
I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , ID=8A | --- | 28 | 37 | mΩ |
VGS=4.5V , ID=5A | --- | 37 | 45 | |||
VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =250uA | 1 | --- | 2.5 | V |
△VGS(th) | VGS(th) Umlinganiso wobushushu | --- | -5.24 | --- | mV/℃ | |
IDSS | Ukuvuza kweMithombo yangoku | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Phambili Transconductance | VDS=5V , ID=8A | --- | 21 | --- | S |
Rg | Ukunyangwa kweSango | VDS=0V , VGS=0V , f=1MHz | --- | 3.0 | 4.5 | Ω |
Qg | Intlawulo yeSango iyonke (4.5V) | VDS=48V , VGS=4.5V , ID=8A | --- | 12.6 | 20 | nC |
Qgs | Intlawulo yeSango-Umthombo | --- | 3.5 | --- | ||
Qgd | Intlawulo yeSango-Drain | --- | 6.3 | --- | ||
Td(on) | Vula Ixesha lokulibaziseka | VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
Tr | Ixesha lokunyuka | --- | 14.2 | --- | ||
Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 24.6 | --- | ||
Tf | Ixesha Lokuwa | --- | 4.6 | --- | ||
Ciss | Igalelo Lobuchule | VDS=15V , VGS=0V , f=1MHz | --- | 670 | --- | pF |
Coss | Isakhono sokuPhuma | --- | 70 | --- | ||
Crss | UReverse Transfer Capacitance | --- | 35 | --- |