I-WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

iimveliso

I-WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

inkcazelo emfutshane:


  • Inombolo yoMfanekiso:WSF6012
  • BVDSS:60V / -60V
  • RDSON:28mΩ/75mΩ
  • Isazisi:20A/-15A
  • Isitishi:N&P-Channel
  • Umqulu:UKUYA-252-4L
  • Imveliso yeHlobo:I-WSF6012 MOSFET inoluhlu lwe-voltage ye-60V kunye -60V, inokusingatha imisinga ukuya kwi-20A kunye ne-15A, inokumelana ne-28mΩ kunye ne-75mΩ, ibonisa zombini i-N & P-Channel, kwaye ifakwe kwi-TO-252-4L.
  • Usetyenziso:I-e-cigarettes, iitshaja ezingenazingcingo, iimotha, ii-backups zamandla, iidrones, ukhathalelo lwempilo, iitshaja zemoto, izilawuli, izinto zombane, izixhobo zombane, kunye nempahla yabathengi.
  • Iinkcukacha zeMveliso

    Isicelo

    Iithegi zeMveliso

    Inkcazo ngokubanzi

    I-WSF6012 MOSFET sisixhobo esisebenza kakhulu esinoyilo oluxinana kakhulu lweeseli. Ibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango efanelekileyo kwezona zicelo zininzi zoguqulo lwe-buck. Ukongeza, ihlangabezana neemfuno ze-RoHS kunye neMveliso eluhlaza, kwaye iza ne-100% isiqinisekiso se-EAS sokusebenza ngokupheleleyo kunye nokuthembeka.

    Iimbonakalo

    Advanced Trench Technology kunye High Cell Density, Super Low Gate Charge, Excellent CdV/dt Effect Decline, 100% EAS Guarantee, kunye noKhetho lweSixhobo esisiSingqongileyo.

    Usetyenziso

    I-High Frequency Point-of-Load Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, umbane ongxamisekileyo, iidrones, impilo, iitshaja zeemoto, abalawuli, izixhobo zedijithali, izixhobo ezincinci zasekhaya, kunye nee-elektroniki zabathengi.

    inombolo yezinto ezihambelanayo

    I-AOS AOD603A,

    Iiparamitha ezibalulekileyo

    Uphawu Ipharamitha Ukukala Iiyunithi
    N-Channel IP-Channel
    VDS I-Drain-Source Voltage 60 -60 V
    VGS Isango-Umthombo weVoltage ±20 ±20 V
    ID@TC=25℃ Utsalo oluqhubekayo lwangoku, VGS @ 10V1 20 -15 A
    ID@TC=70℃ Utsalo oluqhubekayo lwangoku, VGS @ 10V1 15 -10 A
    IDM I-Pulsed Drain yangoku2 46 -36 A
    EAS I-Single Pulse Avalanche Energy3 200 180 mJ
    IAS IAvalanche yangoku 59 -50 A
    PD@TC=25℃ Ukuchithwa koMbane ngokupheleleyo4 34.7 34.7 W
    TSTG Uluhlu lobushushu boGcino -55 ukuya kwi-150 -55 ukuya kwi-150
    TJ Uluhlu lobushushu lweJunction Junction -55 ukuya kwi-150 -55 ukuya kwi-150
    Uphawu Ipharamitha Iimeko Min. Isichwethezo. Max. Iyunithi
    BVDSS I-Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
    △BVDSS/△TJ I-Coefficient yoBubushushu be-BVDSS Isalathiso ku-25℃ , ID=1mA --- 0.063 --- V/℃
    I-RDS(ON) Static Drain-Umthombo on-Resistance2 VGS=10V , ID=8A --- 28 37
    VGS=4.5V , ID=5A --- 37 45
    VGS(th) Umbane weSango iThreshold VGS=VDS , ID =250uA 1 --- 2.5 V
    △VGS(th) VGS(th) Umlinganiso wobushushu --- -5.24 --- mV/℃
    IDSS Ukuvuza kweMithombo yangoku VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA
    VDS=48V , VGS=0V , TJ=55℃ --- --- 5
    IGSS Ukuvuza kweSango-Umthombo ngoku VGS=±20V , VDS=0V --- --- ±100 nA
    gfs Phambili Transconductance VDS=5V , ID=8A --- 21 --- S
    Rg Ukunyangwa kweSango VDS=0V , VGS=0V , f=1MHz --- 3.0 4.5 Ω
    Qg Intlawulo yeSango iyonke (4.5V) VDS=48V , VGS=4.5V , ID=8A --- 12.6 20 nC
    Qgs Intlawulo yeSango-Umthombo --- 3.5 ---
    Qgd Intlawulo yeSango-Drain --- 6.3 ---
    Td(on) Vula Ixesha lokulibaziseka VDD=30V , VGS=4.5V ,

    RG=3.3Ω, ID=1A

    --- 8 --- ns
    Tr Ixesha lokunyuka --- 14.2 ---
    Td(cima) Ixesha lokulibazisa lokucinywa --- 24.6 ---
    Tf Ixesha Lokuwa --- 4.6 ---
    Ciss Igalelo Lobuchule VDS=15V , VGS=0V , f=1MHz --- 670 --- pF
    Coss Isakhono sokuPhuma --- 70 ---
    Crss UReverse Transfer Capacitance --- 35 ---

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