I-WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
Inkcazo ngokubanzi
I-WSF4022 yeyona ndawo iphezulu yokusebenza komsele we-Dual N-Ch MOSFET enoxinaniso oluphezulu lweeseli, ebonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zokuguqula i-buck synchronous. ukuthembeka kuvunyiwe.
Iimbonakalo
I-H-Bridge yomqhubi wangaphambili, uLawulo lweeMoto, uLungiso oluNxulumaniso, i-E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, izixhobo zombane ezingxamisekileyo, iidrone, ukhathalelo lwezonyango, iitshaja zemoto, abalawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, umbane wabathengi.
Usetyenziso
I-H-Bridge yomqhubi wangaphambili, uLawulo lweeMoto, uLungiso oluNxulumaniso, i-E-cigarettes, ukutshaja ngaphandle kwamacingo, iimotor, izixhobo zombane ezingxamisekileyo, iidrone, ukhathalelo lwezonyango, iitshaja zemoto, abalawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, umbane wabathengi.
inombolo yezinto ezihambelanayo
AOS
Iiparamitha ezibalulekileyo
| Uphawu | Ipharamitha | Ukukala | Iiyunithi | |
| VDS | I-Drain-Source Voltage | 40 | V | |
| VGS | Isango-Umthombo wombane | ±20 | V | |
| ID | Khupha okwangoku (Okuqhubekayo) *AC | TC=25°C | 20* | A |
| ID | Khupha okwangoku (Okuqhubekayo) *AC | TC=100°C | 20* | A |
| ID | Khupha okwangoku (Okuqhubekayo) *AC | TA=25°C | 12.2 | A |
| ID | Khupha okwangoku (Okuqhubekayo) *AC | TA=70°C | 10.2 | A |
| IDMa | I-Pulsed Drain yangoku | TC=25°C | 80* | A |
| EASb | I-Single Pulse Avalanche Energy | L=0.5mH | 25 | mJ |
| IAS b | IAvalanche yangoku | L=0.5mH | 17.8 | A |
| PD | Ukuchithwa kwamandla aphezulu | TC=25°C | 39.4 | W |
| PD | Ukuchithwa kwamandla aphezulu | TC=100°C | 19.7 | W |
| PD | Ukuchithwa kwamandla | TA=25°C | 6.4 | W |
| PD | Ukuchithwa kwamandla | TA=70°C | 4.2 | W |
| TJ | Uluhlu lobushushu lweJunction Junction | 175 | ℃ | |
| TSTG | Ubushushu bokusebenza/ Ubushushu boGcino | -55 ~ 175 | ℃ | |
| RθJA b | I-Thermal Resistance Junction-Ambient | Ilizwe elizinzileyo c | 60 | ℃/W |
| RθJC | I-Thermal Resistance Junction ukuya kwiCase | 3.8 | ℃/W |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| I-Static | ||||||
| V(BR)DSS | I-Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | I-Zero Gate ye-Volt Drain yangoku | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | I-Zero Gate ye-Volt Drain yangoku | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Ukuvuza kweSango ngoku | VGS = ± 20V, VDS = 0V | ±100 | nA | ||
| VGS(th) | Umbane weSango iThreshold | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| I-RDS(ivuliwe) d | I-Drain-Source kwi-State Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Umphathi wesango | ||||||
| Qg | Intlawulo yeSango iyonke | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Intlawulo yeSango-Umthombo | 3.24 | nC | |||
| Qgd | Intlawulo yeSango-Drain | 2.75 | nC | |||
| Amandla | ||||||
| Ciss | Igalelo Lobuchule | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| Coss | Isakhono sokuPhuma | 95 | pF | |||
| Crss | UReverse Transfer Capacitance | 60 | pF | |||
| td (ivuliwe) | Layita Ixesha lokulibaziseka | VDD=20V, VGEN=10V, I-IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | Layita Ixesha lokuKhuphuka | 6.9 | ns | |||
| td(cima) | Ukucinywa kwexesha lokulibazisa | 22.4 | ns | |||
| tf | Ukucima ixesha lekwindla | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Forward Voltage | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Igalelo Lobuchule | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Isakhono sokuPhuma | 8.7 | nC | |||
