WSD80130DN56 N-channel 80V 130A DFN5X6-8 WINSOK MOSFET

iimveliso

WSD80130DN56 N-channel 80V 130A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:WSD80130DN56

BVDSS:80V

Isazisi:130A

RDSON:2.7mΩ

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD80130DN56 MOSFET yi-80V, okwangoku yi-130A, ukuchasana ngu-2.7mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

Iidrones MOSFET, iimotor MOSFET, MOSFET zonyango, izixhobo zamandla MOSFET, ESCs MOSFET.

I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo

I-AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

80

V

VGS

Isango-Sourkunye neVoltage

±20

V

TJ

Ubushushu obuphezulu beJunction

150

°C

ID

Uluhlu lobushushu boGcino

-55 ukuya kwi-150

°C

ID

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS=10V,TC=25°C

130

A

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS=10V,TC=70°C

89

A

IDM

I-Pulsed Drain yangoku ,TC=25°C

400

A

PD

Ubuninzi boKuchithwa kwamandla,TC=25°C

200

W

RqJC

I-Thermal Resistance-Junction to Case

1.25

°C

       

 

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=250uA

80

---

---

V

BVDSS/△TJ

BVDSSI-Coefficient yobushushu Isalathiso ku-25,ID=1mA

---

0.043

---

V/

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=10V , MnaD=40A

---

2.7

3.6

mΩ

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)I-Coefficient yobushushu

---

-6.94

---

mV/

IDSS

Ukuvuza kweMithombo yangoku VDS=48V , iVGS=0V , TJ=25

---

---

2

uA

VDS=48V , iVGS=0V , TJ=55

---

---

10

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V, VDS=0V

---

---

±100

nA

Qg

Iyonke intlawulo yeSango (10V) VDS=30V , iVGS=10V , mnaD=30A

---

48.6

---

nC

Qgs

Intlawulo yeSango-Umthombo

---

17.5

---

Qgd

Intlawulo yeSango-Drain

---

10.4

---

Td(on)

Vula Ixesha lokulibaziseka VDD=30V , iVGS=10V ,

RG=2.5Ω,ID=2A ,RL=15Ω.

---

20

---

ns

Tr

Ixesha lokunyuka

---

10

---

Td(cima)

Ixesha lokulibazisa lokucinywa

---

35

---

Tf

Ixesha Lokuwa

---

12

---

Ciss

Igalelo Lobuchule VDS=25V , iVGS=0V , f=1MHz

---

4150

---

pF

Coss

Isakhono sokuPhuma

---

471

---

Crss

UReverse Transfer Capacitance

---

20

---


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