I-WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD80120DN56 MOSFET yi-85V, okwangoku yi-120A, ukuchasana ngu-3.7mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
Amandla ombane ezonyango iMOSFET, izixhobo zokufota iMOSFET, iidrones MOSFET, ulawulo lwamashishini iMOSFET, 5G MOSFET, ii-automotive electronics MOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 85 | V |
| VGS | Isango-Sourkunye neVoltage | ±25 | V |
| ID@TC=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 120 | A |
| ID@TC=100℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 96 | A |
| IDM | I-Pulsed Drain yangoku..TC=25°C | 384 | A |
| EAS | Amandla eAvalanche, ipulse enye,L=0.5mH | 320 | mJ |
| IAS | IAvalanche yangoku, ipulse enye,L=0.5mH | 180 | A |
| PD@TC=25℃ | Ukuchithwa kwamandla ngokupheleleyo | 104 | W |
| PD@TC=100℃ | Ukuchithwa kwamandla ngokupheleleyo | 53 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-175 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | 175 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 85 | --- | --- | V |
| △BVDSS/△TJ | BVDSSI-Coefficient yobushushu | Isalathiso ku-25℃,ID=1mA | --- | 0.096 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance | VGS=10V,ID=50A | --- | 3.7 | 4.8 | mΩ |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | -5.5 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=85V , iVGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , iVGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±25V ,VDS=0V | --- | --- | ±100 | nA |
| Rg | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Iyonke intlawulo yeSango (10V) | VDS=50V , iVGS=10V , mnaD=10A | --- | 54 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 17 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 11 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=50V , iVGS=10V , RG=1Ω,RL=1Ω,IDS=10A. | --- | 21 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 18 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 36 | --- | ||
| Tf | Ixesha Lokuwa | --- | 10 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=40V , iVGS=0V , f=1MHz | --- | 3750 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 395 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 180 | --- |
