WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD75N12GDN56 MOSFET yi-120V, okwangoku yi-75A, ukuchasana ngu-6mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
Izixhobo zonyango MOSFET, Drones MOSFET, PD izixhobo amandla MOSFET, LED umbane MOSFET, izixhobo zoshishino MOSFET.
Imimandla yesicelo se-MOSFETWINSOK MOSFET ihambelana namanye amanani ezixhobo zophawu
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDSS | I-Drain-to-Source Voltage | 120 | V |
| VGS | I-Gate-to-Source Voltage | ±20 | V |
| ID | 1 Utsalo oluqhubekayo lwangoku (Tc=25℃) | 75 | A |
| ID | 1 Utsalo oluqhubekayo lwangoku (Tc=70℃) | 70 | A |
| IDM | I-Pulsed Drain yangoku | 320 | A |
| IAR | I-pulse enye ye-avalanche yangoku | 40 | A |
| EASa | I-pulse avalanche energy enye | 240 | mJ |
| PD | Ukuchithwa kwamandla | 125 | W |
| TJ, Tst | IJunction yokuSebenza kunye neNdawo yoBubushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TL | Ubushushu obuphezulu boKuthengiswa | 260 | ℃ |
| RθJC | Ukumelana neThermal, Ukuhlangana-kwiCase | 1.0 | ℃/W |
| RθJA | Ukunyangwa kweThermal, Ukuhlangana-ukuya-kwi-Ambient | 50 | ℃/W |
| Uphawu | Ipharamitha | Iimeko zovavanyo | Min. | Isichwethezo. | Max. | Iiyunithi |
| VDSS | Khupha ukuya kuMthombo woCando loMbane | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Khupha kuMthombo wokuvuza kwangoku | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS(F) | Ukuvuza kweSango kuMthombo | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Isango lokuya kuMthombo ukuvuza okubuyela umva | VGS =-20V | -- | -- | -100 | nA |
| VGS(TH) | Umbane weSango iThreshold | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| I-RDS(KU)1 | I-Drain-to-Source kwi-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Phambili Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Igalelo Lobuchule | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Coss | Isakhono sokuPhuma | -- | 429 | -- | pF | |
| Crss | UReverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Ukuchasa isango | -- | 2.5 | -- | Ω | |
| td(ON) | Layita Ixesha lokulibaziseka | I-ID = 20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Ixesha lokunyuka | -- | 11 | -- | ns | |
| td(OFF) | Ixesha lokulibazisa lokucinywa | -- | 55 | -- | ns | |
| tf | Ixesha Lokuwa | -- | 28 | -- | ns | |
| Qg | Intlawulo yeSango iyonke | VGS =0 ~ 10V VDS = 50VIsazisi =20A | -- | 61.4 | -- | nC |
| Qgs | Intlawulo yomthombo weSango | -- | 17.4 | -- | nC | |
| Qgd | Umrhumo weGate Drin | -- | 14.1 | -- | nC | |
| IS | Diode Phambili ngoku | TC =25 °C | -- | -- | 100 | A |
| ISM | I-Diode Pulse yangoku | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Ixesha lokuBuyisa umva | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Intlawulo yokuBuyisa umva | -- | 250 | -- | nC |
