I-WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD60N10GDN56 MOSFET yi-100V, okwangoku yi-60A, ukuchasana ngu-8.5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
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Imimandla yesicelo se-MOSFETWINSOK MOSFET ihambelana namanye amanani ezixhobo zophawu
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Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 100 | V |
| VGS | Isango-Umthombo weVoltage | ±20 | V |
| ID@TC=25℃ | Ukukhupha amanzi ngokuqhubekayo | 60 | A |
| I-IDP | I-Pulsed Drain yangoku | 210 | A |
| EAS | Amandla e-Avalanche, i-pulse enye | 100 | mJ |
| PD@TC=25℃ | Ukuchithwa kwamandla ngokupheleleyo | 125 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 100 | --- | --- | V |
| Static Drain-Umthombo on-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| I-RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=80V , iVGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Iyonke intlawulo yeSango (10V) | VDS=50V , iVGS=10V , mnaD=25A | --- | 49.9 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 6.5 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 12.4 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=50V , iVGS=10V ,RG=2.2Ω, mnaD=25A | --- | 20.6 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 5 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 51.8 | --- | ||
| Tf | Ixesha Lokuwa | --- | 9 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=50V , iVGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 362 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Umthombo oqhubekayo wangoku | VG=VD=0V , Nyanzelisa Ngoku | --- | --- | 60 | A |
| I-ISP | Umthombo wangoku | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS=0V , mnaS=12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Ixesha lokuBuyisa umva | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Intlawulo yokuBuyisa umva | --- | 106.1 | --- | nC |
