I-WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET

iimveliso

I-WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD60N10GDN56

BVDSS:100V

Isazisi:60A

RDSON:8.5mΩ

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD60N10GDN56 MOSFET yi-100V, okwangoku yi-60A, ukuchasana ngu-8.5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iimotor MOSFET, iidrones MOSFET, i-MOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, abalawuli be-MOSFET, iimveliso zedijithali iMOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, izixhobo zombane zabathengi iMOSFET.

Imimandla yesicelo se-MOSFETWINSOK MOSFET ihambelana namanye amanani ezixhobo zophawu

I-AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEN3 BOFINEN3BOSFRONSHIN3,IRTOMOSFET91MOSFET9GIR 8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor I-MOSFET PDC92X.

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

100

V

VGS

Isango-Umthombo wombane

±20

V

ID@TC=25℃

Ukukhupha amanzi ngokuqhubekayo

60

A

I-IDP

I-Pulsed Drain yangoku

210

A

EAS

Amandla e-Avalanche, i-pulse enye

100

mJ

PD@TC=25℃

Ukuchithwa kwamandla ngokupheleleyo

125

W

TSTG

Uluhlu lobushushu boGcino

-55 ukuya kwi-150

TJ 

Uluhlu lobushushu lweJunction Junction

-55 ukuya kwi-150

 

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS 

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=250uA

100

---

---

V

  Static Drain-Umthombo on-Resistance VGS=10V,ID=10A.

---

8.5

10. 0

I-RDS(ON)

VGS=4.5V,ID=10A.

---

9.5

12. 0

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=250uA

1.0

---

2.5

V

IDSS

Ukuvuza kweMithombo yangoku VDS=80V , iVGS=0V , TJ=25℃

---

---

1

uA

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V , VDS=0V

---

---

±100

nA

Qg 

Iyonke intlawulo yeSango (10V) VDS=50V , iVGS=10V , mnaD=25A

---

49.9

---

nC

Qgs 

Intlawulo yeSango-Umthombo

---

6.5

---

Qgd 

Intlawulo yeSango-Drain

---

12.4

---

Td(on)

Vula Ixesha lokulibaziseka VDD=50V , iVGS=10V ,RG=2.2Ω, mnaD=25A

---

20.6

---

ns

Tr 

Ixesha lokunyuka

---

5

---

Td(cima)

Ixesha lokulibazisa lokucinywa

---

51.8

---

Tf 

Ixesha Lokuwa

---

9

---

Ciss 

Igalelo Lobuchule VDS=50V , iVGS=0V , f=1MHz

---

2604

---

pF

Coss

Isakhono sokuPhuma

---

362

---

Crss 

UReverse Transfer Capacitance

---

6.5

---

IS 

Umthombo oqhubekayo wangoku VG=VD=0V , Nyanzelisa Ngoku

---

---

60

A

I-ISP

Umthombo wangoku

---

---

210

A

VSD

Diode Forward Voltage VGS=0V , mnaS=12A , TJ=25℃

---

---

1.3

V

trr 

Ixesha lokuBuyisa umva IF=12A,dI/dt=100A/µs,TJ=25℃

---

60.4

---

nS

Qrr 

Intlawulo yokuBuyisa umva

---

106.1

---

nC


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