I-WSD6070DN56 N-channel 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD6070DN56 MOSFET yi-60V, okwangoku yi-80A, ukuchasana ngu-7.3mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iimotor MOSFET, iidrones MOSFET, i-MOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, abalawuli be-MOSFET, iimveliso zedijithali iMOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, izixhobo zombane zabathengi iMOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-POTENS Semiconductor MOSFET PDC696X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 60 | V |
| VGS | Isango-Sourkunye neVoltage | ±20 | V |
| TJ | Ubushushu obuphezulu beJunction | 150 | °C |
| ID | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | °C |
| IS | IDiode eQhubelekayo Phambili Ngoku,TC=25°C | 80 | A |
| ID | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS=10V,TC=25°C | 80 | A |
| Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS=10V,TC=100°C | 66 | A | |
| IDM | I-Pulsed Drain yangoku ,TC=25°C | 300 | A |
| PD | Ubuninzi boKuchithwa kwamandla,TC=25°C | 150 | W |
| Ubuninzi boKuchithwa kwamandla,TC=100°C | 75 | W | |
| RθJA | I-Thermal Resistance-Junction ukuya kwi-Ambient ,t =10s ̀ | 50 | °C/W |
| I-Thermal Resistance-Junction ukuya kwi-Ambient, iStateing State | 62.5 | °C/W | |
| RqJC | I-Thermal Resistance-Junction to Case | 1 | °C/W |
| IAS | IAvalanche yangoku, ipulse enye,L=0.5mH | 30 | A |
| EAS | Amandla eAvalanche, ipulse enye,L=0.5mH | 225 | mJ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSI-Coefficient yobushushu | Isalathiso ku-25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , MnaD=40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=48V , iVGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , iVGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5V , mnaD=20A | --- | 50 | --- | S |
| Rg | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Iyonke intlawulo yeSango (10V) | VDS=30V , iVGS=10V , mnaD=40A | --- | 48 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 17 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 12 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=30V , iVGEN=10V , RG=1Ω,ID=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 10 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 40 | --- | ||
| Tf | Ixesha Lokuwa | --- | 35 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=30V , iVGS=0V , f=1MHz | --- | 2680 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 386 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 160 | --- |
