I-WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD6060DN56 MOSFET yi-60V, okwangoku yi-65A, ukuchasana ngu-7.5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iimotor MOSFET, iidrones MOSFET, i-MOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, abalawuli be-MOSFET, iimveliso zedijithali iMOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, izixhobo zombane zabathengi iMOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iyunithi | |
| Amanqaku aqhelekileyo | ||||
| VDSS | I-Drain-Source Voltage | 60 | V | |
| VGSS | Isango-Umthombo wombane | ±20 | V | |
| TJ | Ubushushu obuphezulu beJunction | 150 | °C | |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | °C | |
| IS | I-Diode eqhubekayo ngoku | Tc=25°C | 30 | A |
| ID | Ukukhupha amanzi ngokuqhubekayo | Tc=25°C | 65 | A |
| Tc=70°C | 42 | |||
| I DM b | I-Pulse Drain yangoku ivavanyiwe | Tc=25°C | 250 | A |
| PD | Ukuchithwa kwamandla aphezulu | Tc=25°C | 62.5 | W |
| TC=70°C | 38 | |||
| RqJL | I-Thermal Resistance-Junction to Lead | Ubume ebuzinzile | 2.1 | °C/W |
| RqJA | I-Thermal Resistance-Junction ukuya kwi-Ambient | t £ 10s | 45 | °C/W |
| Ubume ebuzinzileb | 50 | |||
| MNA AS d | I-Avalanche yangoku, i-pulse enye | L=0.5mH | 18 | A |
| E AS d | Amandla e-Avalanche, i-pulse enye | L=0.5mH | 81 | mJ |
| Uphawu | Ipharamitha | Iimeko zovavanyo | Min. | Isichwethezo. | Max. | Iyunithi | |
| Iimpawu ezimileyo | |||||||
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V, mnaDS=250mA | 60 | - | - | V | |
| IDSS | I-Zero Gate ye-Volt Drain yangoku | VDS=48V, iVGS=0V | - | - | 1 | mA | |
| TJ=85°C | - | - | 30 | ||||
| VGS(th) | Umbane weSango iThreshold | VDS=VGS,IDS=250mA | 1.2 | 1.5 | 2.5 | V | |
| IGSS | Ukuvuza kweSango ngoku | VGS=±20V, iVDS=0V | - | - | ±100 | nA | |
| I-R DS(ON) 3 | I-Drain-Source kwi-State Resistance | VGS=10V, mnaDS=20A | - | 7.5 | 10 | m W | |
| VGS=4.5V, mnaDS=15 A | - | 10 | 15 | ||||
| Iimpawu zeDiode | |||||||
| V SD | Diode Forward Voltage | ISD=1A, VGS=0V | - | 0.75 | 1.2 | V | |
| trr | Ixesha lokuBuyisa umva | ISD=20A, dlSD /dt=100A/µs | - | 42 | - | ns | |
| Qrr | Intlawulo yokuBuyisa umva | - | 36 | - | nC | ||
| Iimpawu ezinamandla3,4 | |||||||
| RG | Ukunyangwa kweSango | VGS=0V,VDS=0V,F=1MHz | - | 1.5 | - | W | |
| Ciss | Igalelo Lobuchule | VGS=0V, VDS=30V, F=1.0MHz Ω | - | 1340 | - | pF | |
| Coss | Isakhono sokuPhuma | - | 270 | - | |||
| Crss | UReverse Transfer Capacitance | - | 40 | - | |||
| td(ON) | Layita Ixesha lokulibaziseka | VDD=30V, IDS=1A, VGEN=10V, RG=6Ω. | - | 15 | - | ns | |
| tr | Layita Ixesha lokuKhuphuka | - | 6 | - | |||
| td( OFF) | Ukucinywa kwexesha lokulibazisa | - | 33 | - | |||
| tf | Ukucima ixesha lekwindla | - | 30 | - | |||
| Iimpawu zeSango lokuTyala 3,4 | |||||||
| Qg | Intlawulo yeSango iyonke | VDS=30V, VGS=4.5V, mnaDS=20A | - | 13 | - | nC | |
| Qg | Intlawulo yeSango iyonke | VDS=30V, iVGS=10V, IDS=20A | - | 27 | - | ||
| Qgth | Intlawulo yeSango iThreshold | - | 4.1 | - | |||
| Qgs | Intlawulo yeSango-Umthombo | - | 5 | - | |||
| Qgd | Intlawulo yeSango-Drain | - | 4.2 | - | |||
