I-WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD6060DN56

BVDSS:60V

Isazisi:65A

RDSON:7.5mΩ

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8

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WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD6060DN56 MOSFET yi-60V, okwangoku yi-65A, ukuchasana ngu-7.5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iimotor MOSFET, iidrones MOSFET, i-MOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, abalawuli be-MOSFET, iimveliso zedijithali iMOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, izixhobo zombane zabathengi iMOSFET.

I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo

I-STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

Iiparamitha ze-MOSFET

Uphawu	Ipharamitha		Ukukala	Iyunithi
Amanqaku aqhelekileyo
VDSS	I-Drain-Source Voltage		60	V
VGSS	Isango-Umthombo weVoltage		±20	V
T_J	Ubushushu obuphezulu beJunction		150	°C
TSTG	Uluhlu lobushushu boGcino		-55 ukuya kwi-150	°C
I_S	I-Diode eqhubekayo ngoku	T_c=25°C	30	A
ID	Ukukhupha amanzi ngokuqhubekayo	T_c=25°C	65	A
ID	Ukukhupha amanzi ngokuqhubekayo	T_c=70°C	42	A
I DM b	I-Pulse Drain yangoku ivavanyiwe	T_c=25°C	250	A
P_D	Ukuchithwa kwamandla aphezulu	T_c=25°C	62.5	W
P_D	Ukuchithwa kwamandla aphezulu	T_C=70°C	38	W
R_qJL	I-Thermal Resistance-Junction to Lead	Ubume ebuzinzile	2.1	°C/W
RqJA	I-Thermal Resistance-Junction ukuya kwi-Ambient	t £ 10s	45	°C/W
RqJA	I-Thermal Resistance-Junction ukuya kwi-Ambient	Ubume ebuzinzile^b	50	°C/W
MNA AS^d	I-Avalanche yangoku, i-pulse enye	L=0.5mH	18	A
E AS d	Amandla e-Avalanche, i-pulse enye	L=0.5mH	81	mJ

Uphawu	Ipharamitha	Iimeko zovavanyo		Min.	Isichwethezo.	Max.	Iyunithi
Iimpawu ezimileyo
BV_DSS	I-Drain-Source Breakdown Voltage	V_GS=0V, mna_DS=250mA		60	-	-	V
IDSS	I-Zero Gate ye-Volt Drain yangoku	V_DS=48V, iV_GS=0V		-	-	1	mA
IDSS	I-Zero Gate ye-Volt Drain yangoku						mA
			T_J=85°C	-	-	30
VGS(th)	Umbane weSango iThreshold	V_DS=V_GS,I_DS=250mA		1.2	1.5	2.5	V
IGSS	Ukuvuza kweSango ngoku	V_GS=±20V, iV_DS=0V		-	-	±100	nA
I-R DS(ON) 3	I-Drain-Source kwi-State Resistance	V_GS=10V, mna_DS=20A		-	7.5	10	m W
I-R DS(ON) 3	I-Drain-Source kwi-State Resistance	V_GS=4.5V, mna_DS=15 A		-	10	15	m W
Iimpawu zeDiode
V SD	Diode Forward Voltage	I_SD=1A, V_GS=0V		-	0.75	1.2	V
t_rr	Ixesha lokuBuyisa umva	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Intlawulo yokuBuyisa umva	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Iimpawu ezinamandla^3,4
R_G	Ukunyangwa kweSango	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Igalelo Lobuchule	V_GS=0V, V_DS=30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Isakhono sokuPhuma			-	270	-
C_rss	UReverse Transfer Capacitance			-	40	-
td(ON)	Layita Ixesha lokulibaziseka	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Layita Ixesha lokuKhuphuka			-	6	-
td( OFF)	Ukucinywa kwexesha lokulibazisa			-	33	-
t_f	Ukucima ixesha lekwindla			-	30	-
Iimpawu zeSango lokuTyala ^3,4
Q_g	Intlawulo yeSango iyonke	V_DS=30V, V_GS=4.5V, mna_DS=20A		-	13	-	nC
Q_g	Intlawulo yeSango iyonke	V_DS=30V, iV_GS=10V, I_DS=20A		-	27	-
Q_gth	Intlawulo yeSango iThreshold			-	4.1	-
Q_gs	Intlawulo yeSango-Umthombo			-	5	-
Q_gd	Intlawulo yeSango-Drain			-	4.2	-