I-WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD6040DN56 MOSFET yi-60V, okwangoku yi-36A, ukuchasana ngu-14mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
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I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi | ||
| VDS | I-Drain-Source Voltage | 60 | V | ||
| VGS | Isango-Umthombo weVoltage | ±20 | V | ||
| ID | Ukukhupha amanzi ngokuqhubekayo | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Ukukhupha amanzi ngokuqhubekayo | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | I-Pulsed Drain yangoku | TC=25°C | 140 | A | |
| PD | Ukuchithwa kwamandla aphezulu | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Ukuchithwa kwamandla aphezulu | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | I-Avalanche yangoku, i-pulse enye | L=0.5mH | 16 | A | |
| EASc | I-Single Pulse Avalanche Energy | L=0.5mH | 64 | mJ | |
| IS | I-Diode eqhubekayo ngoku | TC=25°C | 18 | A | |
| TJ | Ubushushu obuphezulu beJunction | 150 | ℃ | ||
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ | ||
| RθJAb | I-Thermal Resistance Junction ukuya kwi-ambient | Ubume ebuzinzile | 60 | ℃/W | |
| RθJC | I-Thermal Resistance-Junction to Case | Ubume ebuzinzile | 3.3 | ℃/W | |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi | |
| I-Static | |||||||
| V(BR)DSS | I-Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | I-Zero Gate ye-Volt Drain yangoku | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Ukuvuza kweSango ngoku | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Kwiimpawu | |||||||
| VGS(TH) | Umbane weSango iThreshold | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| I-RDS(ivuliwe)d | I-Drain-Source kwi-State Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Ukutshintsha | |||||||
| Qg | Intlawulo yeSango iyonke | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Intlawulo yeSango-Omuncu | 6.4 | nC | ||||
| Qgd | Intlawulo yeSango-Drain | 9.6 | nC | ||||
| td (ivuliwe) | Layita Ixesha lokulibaziseka | VGEN=10V VDD=30V Isazisi=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Layita Ixesha lokuKhuphuka | 9 | ns | ||||
| td(cima) | Ukucinywa kwexesha lokulibazisa | 58 | ns | ||||
| tf | Ukucima ixesha lekwindla | 14 | ns | ||||
| Rg | Ukuxhathisa iGat | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Unamandla | |||||||
| Ciss | KwiCapacitance | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Ngaphandle kweCapacitance | 140 | pF | ||||
| Crss | UReverse Transfer Capacitance | 100 | pF | ||||
| I-Drain-Source yeempawu zeDiode kunye neeReyithingi eziphezulu | |||||||
| IS | Umthombo oqhubekayo wangoku | VG=VD=0V , Nyanzelisa Ngoku | 18 | A | |||
| ISM | Umthombo wangoku3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Ixesha lokuBuyisa umva | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Intlawulo yokuBuyisa umva | 33 | nC | ||||
