I-WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD45N10GDN56 MOSFET yi-100V, okwangoku yi-45A, ukuchasana ngu-14.5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iimotor MOSFET, iidrones MOSFET, i-MOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, abalawuli be-MOSFET, iimveliso zedijithali iMOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, izixhobo zombane zabathengi iMOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 100 | V |
| VGS | Isango-Sourkunye neVoltage | ±20 | V |
| ID@TC=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 45 | A |
| ID@TC=100℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 33 | A |
| ID@TA=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 12 | A |
| ID@TA=70℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 9.6 | A |
| IDMa | I-Pulsed Drain yangoku | 130 | A |
| EASb | I-Single Pulse Avalanche Energy | 169 | mJ |
| IASb | IAvalanche yangoku | 26 | A |
| PD@TC=25℃ | Ukuchithwa kwamandla ngokupheleleyo | 95 | W |
| PD@TA=25℃ | Ukuchithwa kwamandla ngokupheleleyo | 5.0 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃,ID=1mA | --- | 0.0 | --- | V/℃ |
| I-RDS(ON)d | Static Drain-Umthombo on-Resistance2 | VGS=10V , mnaD=26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | -5 | mV/℃ | ||
| IDSS | Ukuvuza kweMithombo yangoku | VDS=80V , iVGS=0V , TJ=25℃ | --- | - | 1 | uA |
| VDS=80V , iVGS=0V , TJ=55℃ | --- | - | 30 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V, VDS=0V | --- | - | ±100 | nA |
| Rge | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Iyonke intlawulo yeSango (10V) | VDS=50V , iVGS=10V , mnaD=26A | --- | 42 | 59 | nC |
| Qgse | Intlawulo yeSango-Umthombo | --- | 12 | -- | ||
| Qgde | Intlawulo yeSango-Drain | --- | 12 | --- | ||
| Td(on)e | Vula Ixesha lokulibaziseka | VDD=30V , iVGEN=10V , RG=6Ω ID=1A ,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Ixesha lokunyuka | --- | 9 | 17 | ||
| Td(cima)e | Ixesha lokulibazisa lokucinywa | --- | 36 | 65 | ||
| Tfe | Ixesha Lokuwa | --- | 22 | 40 | ||
| Cisse | Igalelo Lobuchule | VDS=30V , iVGS=0V , f=1MHz | --- | 1800 | --- | pF |
| eCosse | Isakhono sokuPhuma | --- | 215 | --- | ||
| Crsse | UReverse Transfer Capacitance | --- | 42 | --- |
