WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD4280DN22 MOSFET yi-15V, okwangoku yi-4.6A, ukuchasana ngu-47mΩ, ishaneli yi-Dual P-channel, kunye nephakheji yi-DFN2X2-6L.
Iindawo zesicelo ze-WINSOK MOSFET
Iswitshi yokuthintela kabini; Usetyenziso loguqulo lwe-DC-DC; ukutshaja ibhetri ye-Li; i-E-cigarette MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, ukutshaja imoto nge-MOSFET, isilawuli se-MOSFET, imveliso yedijithali i-MOSFET, izixhobo zombane ezincinci zendlu i-MOSFET, izixhobo zombane zabathengi iMOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-PANJIT MOSFET PJQ2815
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | -15 | V |
| VGS | Isango-Umthombo wombane | ±8 | V |
| ID@Tc=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS= -4.5V1 | -4.6 | A |
| IDM | I-300μS iPulsed Drin yangoku, (VGS=-4.5V) | -15 | A |
| PD | Ukutshatyalaliswa koMbane Ukwehla ngaphezu kwe-TA = 25°C (Qaphela 2) | 1.9 | W |
| TSTG,TJ | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| RθJA | I-Thermal Resistance Junction-ambient1 | 65 | ℃/W |
| RθJC | I-Thermal Resistance Junction-Case1 | 50 | ℃/W |
Iimpawu zoMbane (TJ=25 ℃, ngaphandle kokuba kuphawulwe ngenye indlela)
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=-250uA | -15 | --- | --- | V |
| △BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso kwi-25℃, ID=-1mA | --- | -0.01 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=-4.5V , ID=-1A | --- | 47 | 61 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 61 | 80 | |||
| VGS=-1.8V , ID=-1A | --- | 90 | 150 | |||
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=-250uA | -0.4 | -0.62 | -1.2 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | 3.13 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=-10V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-10V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=-5V , ID=-1A | --- | 10 | --- | S |
| Rg | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 2 | --- | Ω |
| Qg | Intlawulo yeSango iyonke (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-4.6A | --- | 9.5 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 1.4 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 2.3 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=-10V ,VGS=-4.5V , RG=1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 16 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 30 | --- | ||
| Tf | Ixesha Lokuwa | --- | 10 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=-10V , VGS=0V , f=1MHz | --- | 781 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 98 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 96 | --- |
