I-WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET

inkcazelo emfutshane:

Le yibhanki yamandla engenazingcingo ezibona ngokuzenzekelayo iifowuni ze-Apple kwaye ayifuni kuvula iqhosha.Idibanisa i-2.0/QC3.0/PA2.0/PD3.0/SCP/AFC igalelo kunye nemveliso yeprothokholi yokutshaja ngokukhawuleza.Yimveliso yebhanki yamandla engenazingcingo ehambelana ne-Apple/Samsung yefowuni ephathwayo ye-synchronous boost/step-down converters, i-Li battery charger management, i-digital tube power indication, ukutshaja kwamagnetic wireless kunye neminye imisebenzi.

Inombolo yoMfanekiso:WSD4098

BVDSS:40V

RDSON:7.8mΩ

Isazisi:22A

Isitishi:Dual N-Channel

Umqulu:DFN5*6-8

Imveliso yeHlobo:I-voltage ye-WSD4098 MOSFET yi-40V, i-22A yangoku, ukuchasana ngu-7.8mΩ, ishaneli yi-Dual N-Channel, kunye nephakheji yi-DFN5 * 6-8.

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Inkcazo ngokubanzi

I-WSD4098DN56 yeyona ndawo iphezulu yokusebenza komsele we-Dual N-Ch MOSFET enoxinaniso lweeseli eziphakamileyo, ezibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zokuguqula i-buck.I-WSD4098DN56 ihlangabezana neemfuno ze-RoHS kunye neMveliso yoHlaza i-100% EAS eqinisekisiweyo ngokuthembeka okupheleleyo komsebenzi okuvunyiweyo.

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Usetyenziso

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inombolo yezinto ezihambelanayo

AOS AON6884

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha		Ukukala	Iyunithi
Amanqaku aqhelekileyo
VDSS	I-Drain-Source Voltage		40	V
VGSS	Isango-Umthombo wombane		±20	V
TJ	Ubushushu obuphezulu beJunction		150	°C
TSTG	Uluhlu lobushushu boGcino		-55 ukuya kwi-150	°C
IS	I-Diode eqhubekayo ngoku	TA=25°C	11.4	A
ID	Ukukhupha amanzi ngokuqhubekayo	TA=25°C	22	A
ID	Ukukhupha amanzi ngokuqhubekayo			A
		TA=70°C	22
I DM b	I-Pulse Drain yangoku ivavanyiwe	TA=25°C	88	A
PD	Ukuchithwa kwamandla aphezulu	T. =25°C	25	W
PD	Ukuchithwa kwamandla aphezulu	TC=70°C	10	W
RqJL	I-Thermal Resistance-Junction to Lead	Ubume ebuzinzile	5	°C/W
RqJA	I-Thermal Resistance-Junction ukuya kwi-Ambient	t £10s	45	°C/W
RqJA	I-Thermal Resistance-Junction ukuya kwi-Ambient	Ilizwe elizinzileyo b	90	°C/W
Mna AS d	I-Avalanche yangoku, i-pulse enye	L=0.5mH	28	A
E AS d	Amandla e-Avalanche, i-pulse enye	L=0.5mH	39.2	mJ

Uphawu	Ipharamitha	Iimeko zovavanyo		Min.	Isichwethezo.	Max.	Iyunithi
Iimpawu ezimileyo
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	I-Zero Gate ye-Volt Drain yangoku	VDS=32V, VGS=0V		-	-	1	mA
IDSS	I-Zero Gate ye-Volt Drain yangoku						mA
			TJ=85°C	-	-	30
VGS(th)	Umbane weSango iThreshold	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Ukuvuza kweSango ngoku	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON) e	I-Drain-Source kwi-State Resistance	VGS=10V, IDS=14A		-	6.8	7.8	m W
R DS(ON) e	I-Drain-Source kwi-State Resistance	VGS=4.5V, IDS=12 A		-	9.0	11	m W
Iimpawu zeDiode
V SD e	Diode Forward Voltage	ISD=1A, VGS=0V		-	0.75	1.1	V
trr	Ixesha lokuBuyisa umva	ISD=20A, dlSD /dt=100A/µs		-	23	-	ns
Qrr	Intlawulo yokuBuyisa umva	ISD=20A, dlSD /dt=100A/µs		-	13	-	nC
Iimpawu eziGuquzelayo f
RG	Ukunyangwa kweSango	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Igalelo Lobuchule	VGS=0V, VDS=20V, Ukuphindaphinda=1.0MHz		-	1370	1781	pF
Coss	Isakhono sokuPhuma			-	317	-
Crss	UReverse Transfer Capacitance			-	96	-
td(ON)	Layita Ixesha lokulibaziseka	VDD =20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Layita Ixesha lokuKhuphuka			-	8	-
td( OFF)	Ukucinywa kwexesha lokulibazisa			-	30	-
tf	Ukucima ixesha lekwindla			-	21	-
Iimpawu zokuTyala kweSango f
Qg	Intlawulo yeSango iyonke	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Intlawulo yeSango iyonke	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Intlawulo yeSango iThreshold			-	2.6	-
Qgs	Intlawulo yeSango-Umthombo			-	4.7	-
Qgd	Intlawulo yeSango-Drain			-	3	-