I-WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD4080DN56 MOSFET yi-40V, okwangoku yi-85A, ukuchasana ngu-4.5mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
Izixhobo ezincinci ze-MOSFET, izixhobo eziphathwa ngesandla MOSFET, iimotor MOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 40 | V |
| VGS | Isango-Umthombo weVoltage | ±20 | V |
| ID@TC=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS @ 10V1 | 85 | A |
| ID@TC=100℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS @ 10V1 | 58 | A |
| IDM | I-Pulsed Drain yangoku2 | 100 | A |
| EAS | I-Single Pulse Avalanche Energy3 | 110.5 | mJ |
| IAS | IAvalanche yangoku | 47 | A |
| I-PDTC=25℃ | Ukuchithwa kwamandla ngokupheleleyo4 | 52.1 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| RθJA | I-Thermal Resistance Junction-Ambient1 | 62 | ℃/W |
| RθJC | I-Thermal Resistance Junction-Case1 | 2.4 | ℃/W |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 6.4 | 8.5 | |||
| VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=10V , ID=5A | --- | 27 | --- | S |
| Qg | Intlawulo yeSango iyonke (4.5V) | VDS=20V , VGS=4.5V , ID=10A | --- | 20 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 5.8 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 9.5 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=15V , VGS=10V RG=3.3ΩIsazisi=1A | --- | 15.2 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 8.8 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 74 | --- | ||
| Tf | Ixesha Lokuwa | --- | 7 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=15V , VGS=0V , f=1MHz | --- | 2354 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 215 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 175 | --- | ||
| IS | Umthombo oqhubekayo wangoku1,5 | VG=VD=0V , Nyanzelisa Ngoku | --- | --- | 70 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
