I-WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD4076DN56 MOSFET yi-40V, okwangoku yi-76A, ukuchasana ngu-6.9mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
Izixhobo ezincinci ze-MOSFET, izixhobo eziphathwa ngesandla MOSFET, iimotor MOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.
I-PANJIT MOSFET PJQ5442.
I-POTENS Semiconductor MOSFET PDC496X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 40 | V |
| VGS | Isango-Sourkunye neVoltage | ±20 | V |
| ID@TC=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 76 | A |
| ID@TC=100℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V | 33 | A |
| IDM | I-Pulsed Drain yangokua | 125 | A |
| EAS | I-Single Pulse Avalanche Energyb | 31 | mJ |
| IAS | IAvalanche yangoku | 31 | A |
| PD@Ta=25℃ | Ukuchithwa kwamandla ngokupheleleyo | 1.7 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSI-Coefficient yobushushu | Isalathiso ku-25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , MnaD=12A | --- | 6.9 | 8.5 | mΩ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=4.5V , ID=10A | --- | 10 | 15 | mΩ |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 1.5 | 1.6 | 2.5 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=32V , iVGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , iVGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5V , mnaD=20A | --- | 18 | --- | S |
| Rg | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 1.7 | --- | Ω |
| Qg | Iyonke intlawulo yeSango (10V) | VDS=20V , iVGS=4.5V , ID=12A | --- | 5.8 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 3.0 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 1.2 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=15V , iVGEN=10V , RG=3.3Ω,ID=1A. | --- | 12 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 5.6 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 20 | --- | ||
| Tf | Ixesha Lokuwa | --- | 11 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=15V , iVGS=0V , f=1MHz | --- | 680 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 185 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 38 | --- |
