I-WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD40120DN56G MOSFET yi-40V, okwangoku yi-120A, ukuchasana ngu-1.4mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iidrones MOSFET, iMOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, izilawuli zeMOSFET, iimveliso zedijithali iMOSFET, izixhobo ezincinci zasekhaya zeMOSFET, izixhobo zombane zabathengi iMOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-AOS MOSFET AON6234, AON6232, AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 40 | V |
| VGS | Isango-Sourkunye neVoltage | ±20 | V |
| ID@TC=25℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1 | 120 | A |
| ID@TC=100℃ | Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1 | 82 | A |
| IDM | I-Pulsed Drain yangoku2 | 400 | A |
| EAS | I-Single Pulse Avalanche Energy3 | 400 | mJ |
| IAS | IAvalanche yangoku | 40 | A |
| PD@TC=25℃ | Ukuchithwa kwamandla ngokupheleleyo4 | 125 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSI-Coefficient yobushushu | Isalathiso ku-25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , MnaD=20A | --- | 1.4 | 1.8 | mΩ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=4.5V , ID=20A | --- | 2.0 | 2.6 | mΩ |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 1.2 | 1.6 | 2.2 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=32V , iVGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , iVGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5V , mnaD=20A | --- | 53 | --- | S |
| Rg | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Iyonke intlawulo yeSango (10V) | VDS=15V , iVGS=10V , mnaD=20A | --- | 45 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 12 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 18.5 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=15V , iVGEN=10V , RG=3.3Ω,ID=20A ,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 9 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 58.5 | --- | ||
| Tf | Ixesha Lokuwa | --- | 32 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=20V , iVGS=0V , f=1MHz | --- | 3972 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 1119 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 82 | --- |
