I-WSD40190DN56G N-channel 40V 190A DFN5X6-8 WINSOK MOSFET

iimveliso

I-WSD40190DN56G N-channel 40V 190A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD40190DN56G

BVDSS:40V

Isazisi:190A

RDSON:1.25mΩ 

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD40120DN56G MOSFET yi-40V, okwangoku yi-120A, ukuchasana ngu-1.4mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iidrones MOSFET, iMOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, izilawuli zeMOSFET, iimveliso zedijithali iMOSFET, izixhobo ezincinci zasekhaya zeMOSFET, izixhobo zombane zabathengi iMOSFET.

I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo

I-AOS MOSFET AON6234, AON6232, AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

40

V

VGS

Isango-Sourkunye neVoltage

±20

V

ID@TC=25

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1

120

A

ID@TC=100

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1

82

A

IDM

I-Pulsed Drain yangoku2

400

A

EAS

I-Single Pulse Avalanche Energy3

400

mJ

IAS

IAvalanche yangoku

40

A

PD@TC=25

Ukuchithwa kwamandla ngokupheleleyo4

125

W

TSTG

Uluhlu lobushushu boGcino

-55 ukuya kwi-150

TJ

Uluhlu lobushushu lweJunction Junction

-55 ukuya kwi-150

 

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=250uA

40

---

---

V

BVDSS/△TJ

BVDSSI-Coefficient yobushushu Isalathiso ku-25,ID=1mA

---

0.043

---

V/

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=10V , MnaD=20A

---

1.4

1.8

mΩ

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=4.5V , ID=20A

---

2.0

2.6

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=250uA

1.2

1.6

2.2

V

VGS(th)

VGS(th)I-Coefficient yobushushu

---

-6.94

---

mV/

IDSS

Ukuvuza kweMithombo yangoku VDS=32V , iVGS=0V , TJ=25

---

---

1

uA

VDS=32V , iVGS=0V , TJ=55

---

---

5

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Phambili Transconductance VDS=5V , mnaD=20A

---

53

---

S

Rg

Ukunyangwa kweSango VDS=0V , iVGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Iyonke intlawulo yeSango (10V) VDS=15V , iVGS=10V , mnaD=20A

---

45

---

nC

Qgs

Intlawulo yeSango-Umthombo

---

12

---

Qgd

Intlawulo yeSango-Drain

---

18.5

---

Td(on)

Vula Ixesha lokulibaziseka VDD=15V , iVGEN=10V , RG=3.3Ω,ID=20A ,RL=15Ω.

---

18.5

---

ns

Tr

Ixesha lokunyuka

---

9

---

Td(cima)

Ixesha lokulibazisa lokucinywa

---

58.5

---

Tf

Ixesha Lokuwa

---

32

---

Ciss

Igalelo Lobuchule VDS=20V , iVGS=0V , f=1MHz --- 3972 ---

pF

Coss

Isakhono sokuPhuma

---

1119 ---

Crss

UReverse Transfer Capacitance

---

82

---

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