I-WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

iimveliso

I-WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD4018DN22

BVDSS:-40V

Isazisi:-18A

RDSON:26mΩ 

Isitishi:Ijelo leP

Ukupakishwa:DFN2X2-6L


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD4018DN22 MOSFET yi-40V, okwangoku yi-18A, ukuchasana ngu-26mΩ, ishaneli yi-P-channel, kunye nephakheji yi-DFN2X2-6L.

Iindawo zesicelo ze-WINSOK MOSFET

Ubuchwephesha obukwinqanaba eliphezulu lokuxinana kweeseli zeTrench, iSuper Low Gate Charge, iCdv/dt egqwesileyo isiphumo iyancipha isiXhobo esiHlaza Siyafumaneka, izixhobo zokuqaphela ubuso iMOSFET, i-e-cigarette MOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, itshaja yemoto iMOSFET.

I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo

AOS MOSFET AON2409,POTENS MOSFET PDB3909L

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

-40

V

VGS

Isango-Umthombo wombane

±20

V

ID@Tc=25℃

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ -10V1

-18

A

ID@Tc=70℃

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ -10V1

-14.6

A

IDM

300μS Ukutsalwa kweMijelo yangoku, VGS=-4.5V2

54

A

PD@Tc=25℃

Ukuchithwa kwamandla ngokupheleleyo3

19

W

TSTG

Uluhlu lobushushu boGcino

-55 ukuya kwi-150

TJ

Uluhlu lobushushu lweJunction Junction

-55 ukuya kwi-150

Iimpawu zoMbane (TJ=25 ℃, ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=-250uA

-40

---

---

V

△BVDSS/△TJ

I-Coefficient yoBubushushu be-BVDSS Isalathiso kwi-25℃, ID=-1mA

---

-0.01

---

V/℃

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=-10V , ID=-8.0A

---

26

34

VGS=-4.5V , ID=-6.0A

---

31

42

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=-250uA

-1.0

-1.5

-3.0

V

△VGS(th)

VGS(th)I-Coefficient yobushushu

---

3.13

---

mV/℃

IDSS

Ukuvuza kweMithombo yangoku VDS=-40V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-40V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V , VDS=0V

---

---

±100

nA

Qg

Intlawulo yeSango iyonke (-4.5V) VDS=-20V , VGS=-10V , ID=-1.5A

---

27

---

nC

Qgs

Intlawulo yeSango-Umthombo

---

2.5

---

Qgd

Intlawulo yeSango-Drain

---

6.7

---

Td(on)

Vula Ixesha lokulibaziseka VDD=-20V , VGS=-10V ,RG=3Ω , RL=10Ω

---

9.8

---

ns

Tr

Ixesha lokunyuka

---

11

---

Td(cima)

Ixesha lokulibazisa lokucinywa

---

54

---

Tf

Ixesha Lokuwa

---

7.1

---

Ciss

Igalelo Lobuchule VDS=-20V , VGS=0V , f=1MHz

---

1560

---

pF

Coss

Isakhono sokuPhuma

---

116

---

Crss

UReverse Transfer Capacitance

---

97

---


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