I-WSD40120DN56 N-channel 40V 120A DFN5X6-8 WINSOK MOSFET

iimveliso

I-WSD40120DN56 N-channel 40V 120A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD40120DN56

BVDSS:40V

Isazisi:120A

RDSON:1.85mΩ 

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD40120DN56 MOSFET yi-40V, okwangoku yi-120A, ukuchasana ngu-1.85mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

I-E-cigarettes MOSFET, i-MOSFET yokutshaja ngaphandle kwamacingo, iidrones MOSFET, iMOSFET yokhathalelo lwezonyango, iitshaja zemoto iMOSFET, izilawuli zeMOSFET, iimveliso zedijithali iMOSFET, izixhobo ezincinci zasekhaya zeMOSFET, izixhobo zombane zabathengi iMOSFET.

I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo

I-AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET PHTOBPPNFET PH48BAP Q544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

40

V

VGS

Isango-Sourkunye neVoltage

±20

V

ID@TC=25

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1,7

120

A

ID@TC=100

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1,7

100

A

IDM

I-Pulsed Drain yangoku2

400

A

EAS

I-Single Pulse Avalanche Energy3

240

mJ

IAS

IAvalanche yangoku

31

A

PD@TC=25

Ukuchithwa kwamandla ngokupheleleyo4

104

W

TSTG

Uluhlu lobushushu boGcino

-55 ukuya kwi-150

TJ

Uluhlu lobushushu lweJunction Junction

-55 ukuya kwi-150

 

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=250uA

40

---

---

V

BVDSS/△TJ

BVDSSI-Coefficient yobushushu Isalathiso ku-25,ID=1mA

---

0.043

---

V/

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=10V , MnaD=30A

---

1.85

2.4

mΩ

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=4.5V , ID=20A

---

2.5

3.3

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=250uA

1.5

1.8

2.5

V

VGS(th)

VGS(th)I-Coefficient yobushushu

---

-6.94

---

mV/

IDSS

Ukuvuza kweMithombo yangoku VDS=32V , iVGS=0V , TJ=25

---

---

2

uA

VDS=32V , iVGS=0V , TJ=55

---

---

10

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Phambili Transconductance VDS=5V , mnaD=20A

---

55

---

S

Rg

Ukunyangwa kweSango VDS=0V , iVGS=0V , f=1MHz

---

1.1

2

Ω

Qg

Iyonke intlawulo yeSango (10V) VDS=20V , iVGS=10V , mnaD=10A

---

76

91

nC

Qgs

Intlawulo yeSango-Umthombo

---

12

14.4

Qgd

Intlawulo yeSango-Drain

---

15.5

18.6

Td(on)

Vula Ixesha lokulibaziseka VDD=30V , iVGEN=10V , RG=1Ω,ID=1A ,RL=15Ω.

---

20

24

ns

Tr

Ixesha lokunyuka

---

10

12

Td(cima)

Ixesha lokulibazisa lokucinywa

---

58

69

Tf

Ixesha Lokuwa

---

34

40

Ciss

Igalelo Lobuchule VDS=20V , iVGS=0V , f=1MHz

---

4350

---

pF

Coss

Isakhono sokuPhuma

---

690

---

Crss

UReverse Transfer Capacitance

---

370

---


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