WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD20100DN56 MOSFET yi-20V, okwangoku yi-90A, ukuchasana ngu-1.6mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
Imidiza yombane iMOSFET, iidrones MOSFET, izixhobo zombane MOSFET, fascia guns MOSFET, PD MOSFET, izixhobo zekhaya ezincinci MOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
AOS MOSFET AON6572.
I-POTENS Semiconductor MOSFET PDC394X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 20 | V |
| VGS | Isango-Umthombo wombane | ±12 | V |
| ID@TC=25℃ | Ukukhupha amanzi ngokuqhubekayo1 | 90 | A |
| ID@TC=100℃ | Ukukhupha amanzi ngokuqhubekayo1 | 48 | A |
| IDM | I-Pulsed Drain yangoku2 | 270 | A |
| EAS | I-Single Pulse Avalanche Energy3 | 80 | mJ |
| IAS | IAvalanche yangoku | 40 | A |
| PD@TC=25℃ | Ukuchithwa kwamandla ngokupheleleyo4 | 83 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| RθJA | I-Thermal Resistance Junction-ambient1(t≦10S) | 20 | ℃/W |
| RθJA | I-Thermal Resistance Junction-ambient1(Ubume ebuzinzile) | 55 | ℃/W |
| RθJC | I-Thermal Resistance Junction-case1 | 1.5 | ℃/W |
| Uphawu | Ipharamitha | Iimeko | Min | Chwetheza | Max | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | 23 | --- | V |
| VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =250uA | 0.5 | 0.68 | 1.0 | V |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , ID=20A | --- | 1.6 | 2.0 | mΩ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=4.5V , ID=20A | 1.9 | 2.5 | mΩ | |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=2.5V , ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=125℃ | --- | --- | 5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±10V , VDS=0V | --- | --- | ±10 | uA |
| Rg | Ukunyangwa kweSango | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Iyonke intlawulo yeSango (10V) | VDS=15V , VGS=10V , ID=20A | --- | 77 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 8.7 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 14 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=15V , VGS=10V , RG=3 , ID=20A | --- | 10.2 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 11.7 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 56.4 | --- | ||
| Tf | Ixesha Lokuwa | --- | 16.2 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=10V , VGS=0V , f=1MHz | --- | 4307 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 501 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 321 | --- | ||
| IS | Umthombo oqhubekayo wangoku1,5 | VG=VD=0V , Nyanzelisa Ngoku | --- | --- | 50 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Ixesha lokuBuyisa umva | IF=20A , di/dt=100A/µs , TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Intlawulo yokuBuyisa umva | --- | 72 | --- | nC |
