I-WSD3023DN56 N-Ch kunye ne-P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSD3023DN56

BVDSS:I-30V / -30V

RDSON:14mΩ/23mΩ

Isazisi:14A/-12A

Isitishi:I-N-Ch kunye ne-P-Channel

Umqulu:DFN5*6-8

Imveliso yeHlobo:I-voltage ye-WSD3023DN56 MOSFET yi-30V / -30V, i-14A / -12A yangoku, ukuchasana ngu-14mΩ / 23mΩ, umjelo ngu-N-Ch kunye ne-P-Channel, kunye nephakheji yi-DFN5 * 6-8.

Usetyenziso:Iidrone, iimoto, i-elektroniki yeemoto, izixhobo eziphambili.

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Inkcazo ngokubanzi

I-WSD3023DN56 yeyona ndlela iphezulu yokusebenza kwe-N-ch kunye ne-P-ch MOSFETs enoxinaniso oluphezulu lweeseli, olubonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zokuguqula i-buck. I-WSD3023DN56 idibana ne-RoHS kunye nemfuno yeMveliso yoHlaza i-100% EAS eqinisekisiweyo ngokuthembeka okupheleleyo komsebenzi okuvunyiweyo.

Iimbonakalo

Itekhnoloji ephezulu yoxinaniso lweeseli zeTrench, iTshawulo yeSango eliPhantsi eliPhantsi, iCdV/dt egqwesileyo isiphumo sehla, 100% EAS Guaranteed, Isixhobo esiGreen siyafumaneka.

Usetyenziso

I-High Frequency Point-of-Load Buck Converter ye-MB/NB/UMPC/VGA,Inethiwekhi ye-DC-DC Power System ,CCFL Back-light Inverter,Drones, motors, automotive electronics, izixhobo ezinkulu.

inombolo yezinto ezihambelanayo

I-PANJIT PJQ5606

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala		Iiyunithi
Uphawu	Ipharamitha	N-Ch	P-Ch	Iiyunithi
VDS	I-Drain-Source Voltage	30	-30	V
VGS	Isango-Umthombo wombane	±20	±20	V
ID	Utsalo oluqhubekayo lwangoku, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Utsalo oluqhubekayo lwangoku, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
I-IDP a	I-Pulse Drain yangoku ivavanyiwe, VGS(NP)=10V	48	-48	A
I-EAS c	Amandla eAvalanche, ipulse enye, L=0.5mH	20	20	mJ
IAS c	IAvalanche yangoku, ipulse enye , L=0.5mH	9	-9	A
PD	Ukuchithwa koMbane kukonke, Ta=25℃	5.25	5.25	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-175	-55 ukuya kwi-175	℃
TJ	Uluhlu lobushushu lweJunction Junction	175	175	℃
RqJA b	I-Thermal Resistance-Junction ukuya kwi-Ambient, iStateing State	60	60	℃/W
RqJC	I-Thermal Resistance-Junction to Case,Isimo esizinzile	6.25	6.25	℃/W

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
I-RDS(ON)d	Static Drain-Umthombo on-Resistance	VGS=10V , ID=8A	---	14	18.5	mΩ
I-RDS(ON)d	Static Drain-Umthombo on-Resistance	VGS=4.5V , ID=5A	---	17	25	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Ukuvuza kweMithombo yangoku	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Intlawulo yeSango iyonke	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Intlawulo yeSango-Umthombo		---	1.0	---
Qgde	Intlawulo yeSango-Drain		---	2.8	---
Td(ivuliwe)e	Vula Ixesha lokulibaziseka	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Ixesha lokunyuka		---	8.6	---
Td(cima)e	Ixesha lokulibazisa lokucinywa		---	16	---
Tfe	Ixesha Lokuwa		---	3.6	---
Cisse	Igalelo Lobuchule	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
eCosse	Isakhono sokuPhuma		---	95	---
Crsse	UReverse Transfer Capacitance		---	55	---