WSD30150DN56 N-channel 30V 150A DFN5X6-8 WINSOK MOSFET

iimveliso

WSD30150DN56 N-channel 30V 150A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD30150DN56

BVDSS:30V

Isazisi:150A

RDSON:1.8mΩ 

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD30150DN56 MOSFET yi-30V, okwangoku yi-150A, ukuchasana ngu-1.8mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

E-imidiza i-MOSFET, ukutshaja ngaphandle kwamacingo iMOSFET, iidrones MOSFET, ukhathalelo lwezonyango iMOSFET, iitshaja zemoto iMOSFET, izilawuli zeMOSFET, iimveliso zedijithali iMOSFET, izixhobo zombane ezincinci zasekhaya iMOSFET, izixhobo zombane zabathengi iMOSFET.

I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo

AOS MOSFET AON6512,AONS3234.

Onsemi,FAIRCHILD MOSFET FDMC81DCCM.

NXP MOSFET PSMN1R7-3YL.

TOSHIBA MOSFET TPH1R43NL.

I-PANJIT MOSFET PJQ5428.

NIKO-SEM MOSFET PKC26BB,PKE24BB.

I-POTENS Semiconductor MOSFET PDC392X.

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

30

V

VGS

Isango-Sourkunye neVoltage

±20

V

ID@TC=25

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1,7

150

A

ID@TC=100

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V1,7

83

A

IDM

I-Pulsed Drain yangoku2

200

A

EAS

I-Single Pulse Avalanche Energy3

125

mJ

IAS

IAvalanche yangoku

50

A

PD@TC=25

Ukuchithwa kwamandla ngokupheleleyo4

62.5

W

TSTG

Uluhlu lobushushu boGcino

-55 ukuya kwi-150

TJ

Uluhlu lobushushu lweJunction Junction

-55 ukuya kwi-150

 

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=250uA

30

---

---

V

BVDSS/△TJ

BVDSSI-Coefficient yobushushu Isalathiso ku-25,ID=1mA

---

0.02

---

V/

I-RDS(ON)

Static Drain-Umthombo on-Resistance2 VGS=10V , mnaD=20A

---

1.8

2.4 mΩ
VGS=4.5V , ID=15A  

2.4

3.2

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=250uA

1.4

1.7

2.5

V

VGS(th)

VGS(th)I-Coefficient yobushushu

---

-6.1

---

mV/

IDSS

Ukuvuza kweMithombo yangoku VDS=24V , iVGS=0V , TJ=25

---

---

1

uA

VDS=24V , iVGS=0V , TJ=55

---

---

5

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Phambili Transconductance VDS=5V , mnaD=10A

---

27

---

S

Rg

Ukunyangwa kweSango VDS=0V , iVGS=0V , f=1MHz

---

0.8

1.5

Ω

Qg

Intlawulo yeSango iyonke (4.5V) VDS=15V , iVGS=4.5V , ID=30A

---

26

---

nC

Qgs

Intlawulo yeSango-Umthombo

---

9.5

---

Qgd

Intlawulo yeSango-Drain

---

11.4

---

Td(on)

Vula Ixesha lokulibaziseka VDD=15V , iVGEN=10V , RG=6Ω,ID=1A, RL=15Ω.

---

20

---

ns

Tr

Ixesha lokunyuka

---

12

---

Td(cima)

Ixesha lokulibazisa lokucinywa

---

69

---

Tf

Ixesha Lokuwa

---

29

---

Ciss

Igalelo Lobuchule VDS=15V , iVGS=0V , f=1MHz 2560 3200

3850

pF

Coss

Isakhono sokuPhuma

560

680

800

Crss

UReverse Transfer Capacitance

260

320

420


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