WSD30140DN56 N-channel 30V 85A DFN5*6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSD30140DN56

BVDSS:30V

RDSON:1.7mΩ

Isazisi:85A

Isitishi:N-ijelo

Umqulu:DFN5*6-8

Imveliso yeHlobo:I-voltage ye-WSD30140DN56 MOSFET yi-30V, okwangoku yi-85A, ukuchasana ngu-1.7mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5 * 6-8.

Usetyenziso:Imidiza yombane, iitshaja ezingenazingcingo, iidroni, ukhathalelo lwezonyango, iitshaja zemoto, izilawuli, iimveliso zedijithali, izixhobo zombane ezincinci, i-elektroniki yabathengi, njl.

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Inkcazo ngokubanzi

I-WSD30140DN56 yeyona ndawo iphezulu yokusebenza komsele we-N-channel MOSFET enoxinaniso lweeseli oluphezulu kakhulu olubonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kwezona zicelo zininzi ze-synchronous buck converter. I-WSD30140DN56 ihambelana ne-RoHS kunye neemfuno zemveliso eluhlaza, isiqinisekiso se-100% EAS, ukuthembeka okupheleleyo komsebenzi okuvunyiweyo.

Iimbonakalo

Itekhnoloji ephezulu yoxinaniso lweeseli zeTrench, intlawulo yesango ephantsi kakhulu, iCdV/dt egqwesileyo yokunciphisa isiphumo, isiqinisekiso se-100% EAS, izixhobo eziluhlaza ziyafumaneka

Usetyenziso

Ungqamaniso olukwinqanaba eliphezulu lomthwalo, iziguquli zebhaki, iinkqubo zombane zeDC-DC ezidityanisiweyo, usetyenziso lwesixhobo sombane, imidiza ye-elektroniki, ukutshaja ngaphandle kwamacingo, iidrone, ukhathalelo lwezonyango, ukutshaja imoto, abalawuli, iimveliso zedijithali, izixhobo ezincinci zombane, abathengi bombane.

inombolo yezinto ezihambelanayo

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314. KWINTMFS4847N. VISHAY SiRA62DP. I-ST STL86N3LLH6AG. I-INFINEON BSC050N03MSG. TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A. I-NXP PH2520U. TOSHIBA TPH4R803PL TPH3R203NL. ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN. I-PANJIT PJQ5410. AP AP3D5R0MT. NIKO PK610SA, PK510BA. I-POTENS PDC3803R

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	30	V
VGS	Isango-Umthombo weVoltage	±20	V
ID@TC=25℃	Continuous Drin yangoku, VGS @ 10V1,7	85	A
ID@TC=70℃	Continuous Drin yangoku, VGS @ 10V1,7	65	A
IDM	I-Pulsed Drain yangoku2	300	A
PD@TC=25℃	Ukuchithwa koMbane ngokupheleleyo4	50	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃, ID=1mA	---	0.02	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=10V , ID=20A	---	1.7	2.4	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=4.5V , ID=15A		2.5	3.3	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	1.2	1.7	2.5	V
	Ukuvuza kweMithombo yangoku	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=24V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=20A	---	90	---	S
Qg	Intlawulo yeSango iyonke (4.5V)	VDS=15V , VGS=4.5V , ID=20A	---	26	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	9.5	---
Qgd	Intlawulo yeSango-Drain		---	11.4	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=15V , VGEN=10V , RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Ixesha lokunyuka		---	6	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	38.5	---
Tf	Ixesha Lokuwa		---	10	---
Ciss	Igalelo Lobuchule	VDS=15V , VGS=0V , f=1MHz	---	3000	---	pF
Coss	Isakhono sokuPhuma		---	1280	---
Crss	UReverse Transfer Capacitance		---	160	---