WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD25280DN56G MOSFET yi-25V, okwangoku yi-280A, ukuchasana ngu-0.7mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
I-Frequency High Frequency Point-of-Load Synchronous,Buck Converter,Networking DC-DC Power System,Isicelo seSixhobo saMandla,I-E-cigarettes MOSFET, ukutshaja ngaphandle kwamacingo iMOSFET, iidrones MOSFET, ukhathalelo lwezonyango iMOSFET, iitshaja zemoto iMOSFET, abalawuli beMOSFET, iimveliso zedijithali iMOSFET, izixhobo ezincinci zasekhaya zeMOSFET, izixhobo zombane zabathengi iMOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
I-Nxperian MOSFET PSMN1R-4ULD.
I-POTENS Semiconductor MOSFET PDC262X.
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 25 | V |
| VGS | Isango-Sourkunye neVoltage | ±20 | V |
| ID@TC=25℃ | Ukukhupha amanzi ngokuqhubekayo(ISilicon Limited）1,7 | 280 | A |
| ID@TC=70℃ | Ukukhupha amanzi ngokuqhubekayo (Silicon Limited）1,7 | 190 | A |
| IDM | I-Pulsed Drain yangoku2 | 600 | A |
| EAS | I-Single Pulse Avalanche Energy3 | 1200 | mJ |
| IAS | IAvalanche yangoku | 100 | A |
| PD@TC=25℃ | Ukuchithwa kwamandla ngokupheleleyo4 | 83 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , mnaD=250uA | 25 | --- | --- | V |
| △BVDSS/△TJ | BVDSSI-Coefficient yobushushu | Isalathiso ku-25℃,ID=1mA | --- | 0.022 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=10V , mnaD=20A | --- | 0.7 | 0.9 | mΩ |
| VGS=4.5V , ID=20A | --- | 1.4 | 1.9 | |||
| VGS(th) | Umbane weSango iThreshold | VGS=VDS,ID=250uA | 1.0 | --- | 2.5 | V |
| △VGS(th) | VGS(th)I-Coefficient yobushushu | --- | -6.1 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=20V , iVGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V , iVGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5V , mnaD=10A | --- | 40 | --- | S |
| Rg | Ukunyangwa kweSango | VDS=0V , iVGS=0V , f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Intlawulo yeSango iyonke (4.5V) | VDS=15V , iVGS=4.5V , ID=20A | --- | 72 | --- | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 18 | --- | ||
| Qgd | Intlawulo yeSango-Drain | --- | 24 | --- | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=15V , iVGEN=10V ,RG=1Ω,ID=10A | --- | 33 | --- | ns |
| Tr | Ixesha lokunyuka | --- | 55 | --- | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 62 | --- | ||
| Tf | Ixesha Lokuwa | --- | 22 | --- | ||
| Ciss | Igalelo Lobuchule | VDS=15V , iVGS=0V , f=1MHz | --- | 7752 | --- | pF |
| Coss | Isakhono sokuPhuma | --- | 1120 | --- | ||
| Crss | UReverse Transfer Capacitance | --- | 650 | --- |
