I-WSD20L120DN56 P-channel -20V -120A DFN5*6-8 WINSOK MOSFET
Inkcazo ngokubanzi
I-WSD20L120DN56 yi-P-Ch MOSFET eqhuba kakuhle kakhulu enesakhiwo seseli esinoxinaniso oluphezulu, enika iRDSON egqwesileyo kunye nentlawulo yesango kuninzi olusetyenziswayo kwi-synchronous buck converter. I-WSD20L120DN56 ihlangabezana ne-100% yeemfuno ze-EAS ze-RoHS kunye neemveliso ezihambelana nokusingqongileyo, kunye nokuvunywa kokuthembeka okupheleleyo.
Iimbonakalo
1,Itekhnoloji ephezulu yoxinaniso lweeseli zeTrench
2,Intlawulo yeSango eliPhantsi
3, isiphumo esihle kakhulu se-CdV/dt siyancipha
4, 100% EAS Guaranteed 5, Green Device Ikhona
Usetyenziso
I-High Frequency Point-of-Load Buck Converter ye-MB/NB/UMPC/VGA, i-Networking DC-DC Power System, i-Load Switch, i-E-cigarette, itshaja engenazingcingo, iiMoto, iiDrones, ezoNyango, iTshaja yeMoto, isiLawuli, iDigital Products, IziXhobo zeKhaya ezincinci, i-Electronics yabathengi.
inombolo yezinto ezihambelanayo
AOS AON6411,NIKO PK5A7BA
Iiparamitha ezibalulekileyo
Uphawu | Ipharamitha | Ukukala | Iiyunithi | |
10s | Ubume ebuzinzile | |||
VDS | I-Drain-Source Voltage | -20 | V | |
VGS | Isango-Umthombo weVoltage | ±10 | V | |
ID@TC=25℃ | Continuous Drin yangoku, VGS @ -10V1 | -120 | A | |
ID@TC=100℃ | Continuous Drin yangoku, VGS @ -10V1 | -69.5 | A | |
ID@TA=25℃ | Continuous Drin yangoku, VGS @ -10V1 | -25 | -22 | A |
ID@TA=70℃ | Continuous Drin yangoku, VGS @ -10V1 | -24 | -18 | A |
IDM | I-Pulsed Drain yangoku2 | -340 | A | |
EAS | I-Single Pulse Avalanche Energy3 | 300 | mJ | |
IAS | IAvalanche yangoku | -36 | A | |
PD@TC=25℃ | Ukuchithwa koMbane ngokupheleleyo4 | 130 | W | |
PD@TA=25℃ | Ukuchithwa koMbane ngokupheleleyo4 | 6.8 | 6.25 | W |
TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ | |
TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
△BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃ , ID=-1mA | --- | -0.0212 | --- | V/℃ |
I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=-4.5V , ID=-20A | --- | 2.1 | 2.7 | mΩ |
VGS=-2.5V , ID=-20A | --- | 2.8 | 3.7 | |||
VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =-250uA | -0.4 | -0.6 | -1.0 | V |
△VGS(th) | VGS(th) Umlinganiso wobushushu | --- | 4.8 | --- | mV/℃ | |
IDSS | Ukuvuza kweMithombo yangoku | VDS=-20V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
VDS=-20V , VGS=0V , TJ=55℃ | --- | --- | -6 | |||
IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Phambili Transconductance | VDS=-5V , ID=-20A | --- | 100 | --- | S |
Rg | Ukunyangwa kweSango | VDS=0V , VGS=0V , f=1MHz | --- | 2 | 5 | Ω |
Qg | Intlawulo yeSango iyonke (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-20A | --- | 100 | --- | nC |
Qgs | Intlawulo yeSango-Umthombo | --- | 21 | --- | ||
Qgd | Intlawulo yeSango-Drain | --- | 32 | --- | ||
Td(on) | Vula Ixesha lokulibaziseka | VDD=-10V , VGEN=-4.5V , RG=3Ω ID=-1A ,RL=0.5Ω | --- | 20 | --- | ns |
Tr | Ixesha lokunyuka | --- | 50 | --- | ||
Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 100 | --- | ||
Tf | Ixesha Lokuwa | --- | 40 | --- | ||
Ciss | Igalelo Lobuchule | VDS=-10V , VGS=0V , f=1MHz | --- | 4950 | --- | pF |
Coss | Isakhono sokuPhuma | --- | 380 | --- | ||
Crss | UReverse Transfer Capacitance | --- | 290 | --- |