WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:I-WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

Isazisi:80A

Isitishi:N-ijelo

Umqulu:DFN5*6-8

Imveliso yeHlobo:I-voltage ye-WSD2090DN56 MOSFET yi-20V, okwangoku yi-80A, ukuchasana ngu-2.8mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5 * 6-8.

Usetyenziso:I-cigarettes ye-elektroniki, i-drones, izixhobo zombane, i-fascia guns, i-PD, izixhobo ezincinci zendlu, njl.

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Inkcazo ngokubanzi

I-WSD2090DN56 yeyona ndlela iphezulu yokusebenza kwe-N-Ch MOSFET enoxinaniso oluphezulu lweeseli, ebonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi lwezicelo zokuguqula i-buck ehambelanayo.I-WSD2090DN56 ihlangabezana neemfuno ze-RoHS kunye neMveliso yoHlaza i-100% EAS eqinisekisiweyo ngokuthembeka okupheleleyo komsebenzi okuvunyiweyo.

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Itekhnoloji ephezulu yokuxinana kweeseli zeTrench, Intlawulo yeSango ePhantsi ePhantsi, iCdV egqwesileyo / dt isiphumo sehla, 100% EAS Guaranteed, Isixhobo esiGreen siyafumaneka

Usetyenziso

Ukutshintsha, iNkqubo yaMandla, Ukutshintsha komthwalo, icuba ze-elektroniki, iidrone, izixhobo zombane, imipu ye-fascia, iPD, izixhobo ezincinci zasekhaya, njl.

inombolo yezinto ezihambelanayo

AOS AON6572

Iiparamitha ezibalulekileyo

Ezona Reyithi ziPhakamileyo (TC=25℃ ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Max.	Iiyunithi
VDSS	I-Drain-Source Voltage	20	V
VGSS	Isango-Umthombo wombane	±12	V
ID@TC=25℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	80	A
ID@TC=100℃	Utsalo oluqhubekayo lwangoku, VGS @ 10V1	59	A
IDM	I-Pulsed Drain yangoku inqaku1	360	A
EAS	Inqaku le-Avalanche Eyenye iPulsed Avalanche2	110	mJ
PD	Ukuchithwa kwamandla	81	W
RθJA	Ukunyangwa kweThermal, Ukuhlangana kwiCase	65	℃/W
RθJC	I-Thermal Resistance Junction-Case 1	4	℃/W
TJ, TSTG	Uluhlu lobushushu bokuSebenza kunye noGcino	-55 ukuya +175	℃

Iimpawu zoMbane (TJ=25 ℃, ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Iimeko	Min	Chwetheza	Max	Iiyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃ , ID=1mA	---	0.018	---	V/℃
VGS(th)	Umbane weSango iThreshold	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
I-RDS(ON)	Static Drain-Umthombo on-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	I-Zero Gate ye-Volt Drain yangoku	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Ukuvuza kweSango-Body yangoku	VGS=±10V, VDS=0V	---	---	±100	nA
Ciss	Igalelo Lobuchule	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Isakhono sokuPhuma		---	460	---
Crss	UReverse Transfer Capacitance		---	446	---
Qg	Intlawulo yeSango iyonke	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	1.73	---
Qgd	Intlawulo yeSango-Drain		---	3.1	---
tD(on)	Layita Ixesha lokulibaziseka	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Layita Ixesha lokuKhuphuka		---	37	---
tD(cima)	Ukucinywa kwexesha lokulibazisa		---	63	---
tf	Ukucima ixesha lokuwa		---	52	---
VSD	Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V