I-WSD100N15DN56G N-channel 150V 100A DFN5X6-8 WINSOK MOSFET

iimveliso

I-WSD100N15DN56G N-channel 150V 100A DFN5X6-8 WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yendawo:I-WSD100N15DN56G

BVDSS:150V

Isazisi:100A

RDSON:6mΩ

Isitishi:N-ijelo

Ukupakishwa:DFN5X6-8


Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

WINSOK MOSFET isishwankathelo semveliso

I-voltage ye-WSD100N15DN56G MOSFET yi-150V, okwangoku yi-100A, ukuchasana ngu-6mΩ, umjelo ngu-N-channel, kunye nephakheji yi-DFN5X6-8.

Iindawo zesicelo ze-WINSOK MOSFET

Amandla ombane ezonyango MOSFET, PDs MOSFET, Drones MOSFET, electronic cigarette MOSFET, izixhobo eziphambili MOSFET, kunye nezixhobo zombane MOSFET.

Iiparamitha ze-MOSFET

Uphawu

Ipharamitha

Ukukala

Iiyunithi

VDS

I-Drain-Source Voltage

150

V

VGS

Isango-Umthombo wombane

±20

V

ID

Ukutsalwa kwamanzi okuqhubekayo ngoku, VGS@ 10V(TC=25℃)

100

A

IDM

I-Pulsed Drain yangoku

360

A

EAS

I-Single Pulse Avalanche Energy

400

mJ

PD

Ukuchithwa koMbane ngokupheleleyo...C=25℃)

160

W

RθJA

Ukumelana ne-Thermal, i-junction-ambient

62

℃/W

RθJC

Ukumelana ne-thermal, i-junction-case

0.78

℃/W

TSTG

Uluhlu lobushushu boGcino

-55 ukuya kwi-175

TJ 

Uluhlu lobushushu lweJunction Junction

-55 ukuya kwi-175

 

 

Uphawu

Ipharamitha

Iimeko

Min.

Isichwethezo.

Max.

Iyunithi

BVDSS 

I-Drain-Source Breakdown Voltage VGS=0V , mnaD=250uA

150

---

---

V

I-RDS(ON)

Static Drain-Umthombo on-Resistance2  VGS=10V , mnaD=20A

---

9

12

VGS(th)

Umbane weSango iThreshold VGS=VDS,ID=250uA

2.0

3.0

4.0

V

IDSS

Ukuvuza kweMithombo yangoku VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

IGSS

Ukuvuza kweSango-Umthombo ngoku VGS=±20V , VDS=0V

---

---

±100

nA

Qg 

Intlawulo yeSango iyonke VDS=50V , iVGS=10V , mnaD=20A

---

66

---

nC

Qgs 

Intlawulo yeSango-Umthombo

---

26

---

Qgd 

Intlawulo yeSango-Drain

---

18

---

Td(on)

Vula Ixesha lokulibaziseka VDD=50V ,VGS=10V

RG=2Ω,

ID=20A

---

37

---

ns

Tr 

Ixesha lokunyuka

---

98

---

Td(cima)

Ixesha lokulibazisa lokucinywa

---

55

---

Tf 

Ixesha Lokuwa

---

20

---

Ciss 

Igalelo Lobuchule VDS=30V , iVGS=0V , f=1MHz --- 5450

---

pF

Coss

Isakhono sokuPhuma

---

1730

---

Crss 

UReverse Transfer Capacitance

---

195

---


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