WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET isishwankathelo semveliso
I-voltage ye-WSD100N06GDN56 MOSFET yi-60V, okwangoku yi-100A, ukuchasana yi-3mΩ, ishaneli yi-N-channel, kunye nephakheji yi-DFN5X6-8.
Iindawo zesicelo ze-WINSOK MOSFET
Amandla ombane ezonyango MOSFET, PDs MOSFET, drones MOSFET, electronic cigarette MOSFET, izixhobo eziphambili MOSFET, kunye nezixhobo zombane MOSFET.
I-WINSOK MOSFET ihambelana namanye amanani ezinto zohlobo
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOS2XFET PDC69
Iiparamitha ze-MOSFET
| Uphawu | Ipharamitha | Ukukala | Iiyunithi | ||
| VDS | I-Drain-Source Voltage | 60 | V | ||
| VGS | Isango-Umthombo wombane | ±20 | V | ||
| ID1,6 | Ukukhupha amanzi ngokuqhubekayo | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | I-Pulsed Drain yangoku | TC=25°C | 240 | A | |
| PD | Ukuchithwa kwamandla aphezulu | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | I-Avalanche yangoku, i-pulse enye | 45 | A | ||
| EAS3 | I-Single Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Ubushushu obuphezulu beJunction | 150 | ℃ | ||
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ | ||
| RθJA1 | I-Thermal Resistance Junction ukuya kwi-ambient | Ubume ebuzinzile | 55 | ℃/W | |
| RθJC1 | I-Thermal Resistance-Junction to Case | Ubume ebuzinzile | 1.5 | ℃/W | |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi | |
| I-Static | |||||||
| V(BR)DSS | I-Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | I-Zero Gate ye-Volt Drain yangoku | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Ukuvuza kweSango ngoku | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Kwiimpawu | |||||||
| VGS(TH) | Umbane weSango iThreshold | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| I-RDS(ivuliwe)2 | I-Drain-Source kwi-State Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ukutshintsha | |||||||
| Qg | Intlawulo yeSango iyonke | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Intlawulo yeSango-Omuncu | 16 | nC | ||||
| Qgd | Intlawulo yeSango-Drain | 4.0 | nC | ||||
| td (ivuliwe) | Layita Ixesha lokulibaziseka | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Layita Ixesha lokuKhuphuka | 8 | ns | ||||
| td(cima) | Ukucinywa kwexesha lokulibazisa | 50 | ns | ||||
| tf | Ukucima ixesha lekwindla | 11 | ns | ||||
| Rg | Ukuxhathisa iGat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Unamandla | |||||||
| Ciss | KwiCapacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Ngaphandle kweCapacitance | 1522 | pF | ||||
| Crss | UReverse Transfer Capacitance | 22 | pF | ||||
| I-Drain-Source yeempawu zeDiode kunye neeReyithi eziPhezulu | |||||||
| IS1,5 | Umthombo oqhubekayo wangoku | VG=VD=0V , Nyanzelisa Ngoku | 55 | A | |||
| ISM | Umthombo wangoku3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Ixesha lokuBuyisa umva | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Intlawulo yokuBuyisa umva | 33 | nC | ||||
