I-metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, okanye MOS FET) luhlobo lwe-field-effect transistor (FET), edla ngokuyilwa yi-oxidation elawulwayo ye-silicon. Inesango elifakwe i-insulated, i-voltage emisela ukuqhutyelwa kwesixhobo.
Isici sayo esiphambili kukuba kukho i-silicon dioxide insulating layer phakathi kwesango lesinyithi kunye neshaneli, ngoko inokumelana okuphezulu kwegalelo (ukuya kwi-1015Ω). Ikwahlulwe kwi-tube ye-N-channel kunye ne-P-channel ityhubhu. Ngokuqhelekileyo i-substrate (i-substrate) kunye nomthombo we-S zidibene kunye.
Ngokweendlela ezahlukeneyo zokuqhuba, ii-MOSFET zahlulwe ngohlobo lokuphucula kunye nodidi lokuncipha.
Okubizwa ngokuba luhlobo lokuphucula kuthetha: xa i-VGS=0, ityhubhu ikwimeko yokunqunyulwa. Emva kokongeza i-VGS echanekileyo, abaninzi abathwali bakhangwa esangweni, ngaloo ndlela "baphucula" abathwali kule ndawo kwaye benze umjelo wokuqhuba. .
Indlela yokuncipha ithetha ukuba xa VGS=0, itshaneli yenziwe. Xa i-VGS echanekileyo yongezwa, abaninzi abathwali banokuhamba bephuma kumjelo, ngaloo ndlela "ukunciphisa" abathwali kunye nokucima ityhubhu.
Ukwahlula isizathu: Ukuchasana kwegalelo kwe-JFET kungaphezulu kwe-100MΩ, kwaye i-transconductance iphezulu kakhulu, xa isango likhokelwa, indawo yangaphakathi yemagnethi ilula kakhulu ukufumanisa isignali yedatha yombane osebenzayo esangweni, ukuze umbhobho uthande ukuba ibe phezulu, okanye ityekele ekubeni i-off. Ukuba i-voltage yokungeniswa komzimba yongezwa kwangoko esangweni, kuba uphazamiseko oluphambili lwe-electromagnetic lunamandla, le meko ingasentla iya kubaluleka ngakumbi. Ukuba inaliti yemitha ijikela kabukhali ukuya ekhohlo, oko kuthetha ukuba umbhobho uthande ukuba phezulu, isixhasi se-RDS somthombo wedreyini siyakhula, kwaye isixa somthombo wamanzi siyancipha i-IDS. Ngokuchaseneyo, inaliti yemitha ijikela kabukhali ukuya ngasekunene, ebonisa ukuba umbhobho uthande ukuba ucimile, i-RDS iyehla, kwaye i-IDS iye phezulu. Nangona kunjalo, elona cala lichanekileyo apho inaliti yemitha ijikiswa khona kufuneka ixhomekeke kwiipali ezilungileyo nezingalunganga zombane owenziweyo (ivoltheji esebenza kakuhle kwicala elisebenza ngayo okanye umva umva wombane wokusebenza) kunye nendawo ephakathi yokusebenza yombhobho.
WINSOK DFN3x3 MOSFET
Ukuthatha i-channel ye-N njengomzekelo, yenziwe kwi-P-type ye-silicon substrate eneendawo ezimbini zokusabalalisa umthombo we-doped kakhulu i-N + kunye nemimandla ye-drain diffusion N +, kwaye emva koko i-electrode yomthombo S kunye ne-electrode D ye-drain iphuma ngokulandelelana. Umthombo kunye ne-substrate zidibene ngaphakathi, kwaye zihlala zigcina amandla afanayo. Xa umjelo uqhagamshelwe kwitheminali elungileyo yobonelelo lwamandla kwaye umthombo uqhagamshelwe kwitheminali engalunganga yonikezelo lwamandla kunye neVGS=0, umsinga wejelo (oko kukuthi umsinga wombane) ID=0. Njengoko i-VGS ikhula ngokuthe ngcembe, itsalwa ngumbane wesango eliqinisekileyo, abathwali abancinci abahlawuliswa kakubi baye bangeniswa phakathi kwemimandla emibini yosasazo, besenza umjelo wohlobo lwe-N ukusuka kwidreyini ukuya kwindawo. Xa i-VGS inkulu kune-VTN ye-voltage yokuvula ityhubhu (ngokubanzi malunga ne-+2V), i-tube ye-N-channel iqala ukuqhuba, yenza i-ID yangoku ye-drain.
I-VMOSFET (VMOSFET), igama layo elipheleleyo yi-V-groove MOSFET. Sisixhobo esandula kuphuhliswa ukusebenza kakuhle, isixhobo sokutshintsha amandla emva kwe-MOSFET. Ayizuzi kuphela igalelo eliphezulu le-MOSFET (≥108W), kodwa kunye nencinci yokuqhuba yangoku (malunga ne-0.1μA). Ikwanazo neempawu ezibalaseleyo ezifana ne-voltage ephezulu yokumelana (ukuya kwi-1200V), umsinga omkhulu wokusebenza (1.5A ~ 100A), amandla aphumayo aphezulu (1 ~ 250W), i-transconductance linearity elungileyo, kunye nesantya sokutshintsha ngokukhawuleza. Ngokuchanekileyo kuba idibanisa izibonelelo zeetyhubhu zokucoca kunye ne-transistors yamandla, isetyenziswa ngokubanzi kwi-voltage amplifiers (i-voltage amplification inokufikelela kumawakawaka amaxesha), ii-amplifiers zamandla, ukuguqula umbane kunye ne-inverters.
Njengoko sonke sisazi, isango, umthombo kunye ne-drain ye-MOSFET yesiqhelo ikwinqwelomoya ethe tye kwi-chip, kwaye ukusebenza kwayo ngokusisiseko kuhamba kwicala elithe tye. Ityhubhu yeVMOS yahlukile. Inezinto ezimbini eziphambili zesakhiwo: okokuqala, isango lentsimbi lithatha isakhiwo se-V-shaped groove; okwesibini, ine-conductivity ethe nkqo. Ekubeni umsele utsalwa ngasemva wetshiphu, i-ID ayihambi ngokuthe tye ecaleni kwetshiphu, kodwa iqala ukusuka kwindawo ene-N+ ene-doped kakhulu (umthombo S) kwaye iqukuqelela kwindawo encinci ye-N-drift ngokusebenzisa ijelo le-P. Ekugqibeleni, ifikelela ngokuthe nkqo ezantsi ukukhupha i D. Ngenxa yokuba indawo enqumlayo iyanda, imisinga emikhulu inokudlula. Kuba kukho isilicon dioxide insulating layer phakathi kwesango kunye nechip, iseyisango eligqunyiweyo leMOSFET.
Izinto ezilungileyo zokusetyenziswa:
I-MOSFET yinto elawulwa ngamandla ombane, ngelixa i-transistor yinto elawulwa ngoku.
Ii-MOSFETs kufuneka zisetyenziswe xa kuphela isixa esincinci sangoku esivumelekileyo ukuba sitsalwe kumthombo womqondiso; i-transistors kufuneka isetyenziswe xa i-voltage yesignali iphantsi kwaye ininzi yangoku ivumelekile ukuba itsalwe kumthombo wesignali. I-MOSFET isebenzisa abathwali abaninzi ukuqhuba umbane, ngoko ibizwa ngokuba sisixhobo se-unipolar, ngelixa ii-transistors zisebenzisa zombini abathwali abaninzi kunye nabathwali abambalwa ukuqhuba umbane, ngoko ke ibizwa ngokuba sisixhobo se-bipolar.
Umthombo kunye ne-drain yezinye ii-MOSFETs zinokusetyenziswa ngokutshintshanayo, kwaye umbane wesango unokuba ulungile okanye ungalunganga, ubenze babe bhetyebhetye ngakumbi kune-triodes.
I-MOSFET inokusebenza phantsi kweemeko ezincinci zangoku kunye neziphantsi kakhulu zombane, kwaye inkqubo yokwenziwa kwayo inokudibanisa ngokulula ii-MOSFET ezininzi kwi-silicon chip. Ke ngoko, i-MOSFET isetyenziswe ngokubanzi kwiisekethe ezinkulu ezihlanganisiweyo.
Olueky SOT-23N MOSFET
Iimpawu ezifanelekileyo zesicelo se-MOSFET kunye ne-transistor
1. Imvelaphi s, isango g, kunye nedreyini ye-MOSFET zihambelana ne-emitter e, isiseko se-b, kunye nomqokeleli c we-transistor ngokulandelelanayo. Imisebenzi yabo iyafana.
2. I-MOSFET sisixhobo sangoku esilawulwa ngamandla ombane, i-ID ilawulwa yi-vGS, kwaye i-amplification coefficient gm idla ngokuba yincinci, ngoko ke amandla okukhulisa i-MOSFET akumgangatho ophantsi; i-transistor sisixhobo sangoku esilawulwa ngoku, kwaye i-iC ilawulwa yi-iB (okanye i-iE).
3. Isango le-MOSFET litsala phantse akukho langoku (ig»0); ngelixa isiseko se-transistor sihlala sitsala i-current ethile xa i-transistor isebenza. Ke ngoko, ukuchasana kwesango lokungena kwe-MOSFET kuphezulu kunokumelana nokufakwa kwe-transistor.
4. I-MOSFET yenziwe ngee-multicarriers ezithatha inxaxheba ekuqhubeni; i-transistors inabathwali ababini, i-multicarriers kunye nabathwali abancinci, ababandakanyekayo ekuqhubeni. Ukuxinwa kwabathwali abancinci kuchaphazeleka kakhulu zizinto ezifana nobushushu kunye nemitha. Ke ngoko, ii-MOSFET zinozinzo olungcono lobushushu kunye nokumelana nemitha okunamandla kune-transistors. Ii-MOSFET kufuneka zisetyenziswe apho iimeko zokusingqongileyo (ubushushu, njl.njl.) zahluka kakhulu.
5. Xa umthombo wesinyithi kunye ne-substrate ye-MOSFET idityaniswe kunye, umthombo kunye ne-drain ingasetyenziswa ngokutshintshisanayo, kwaye iimpawu zitshintsha kancinci; ngelixa xa umqokeleli kunye ne-emitter ye-triode isetyenziswa ngokutshintshanayo, iimpawu zihluke kakhulu. Ixabiso le-β liya kuncitshiswa kakhulu.
6. I-coefficient yengxolo ye-MOSFET incinci kakhulu. I-MOSFET kufuneka isetyenziswe kangangoko kunokwenzeka kwinqanaba leesekethe zeamplifier ezinengxolo ephantsi kunye neesekethe ezifuna umlinganiselo ophezulu wesignali ukuya kwingxolo.
7. Zombini i-MOSFET kunye ne-transistor zinokwenza iisekethe zeamplifier ezahlukeneyo kunye neesekethe zokutshintsha, kodwa eyokuqala inenkqubo elula yokwenziwa kwaye ineengenelo zokusetyenziswa kwamandla aphantsi, uzinzo oluhle lwe-thermal, kunye noluhlu olubanzi lonikezelo lwamandla ombane. Ke ngoko, isetyenziswa ngokubanzi kwiisekethe ezihlanganisiweyo ezinkulu nezinkulu kakhulu.
8. I-transistor ine-on-resistance enkulu, ngelixa i-MOSFET inokumelana okuncinci, kuphela amakhulu ambalwa mΩ. Kwizixhobo zombane zangoku, ii-MOSFETs zisetyenziswa ngokubanzi njengokutshintsha, kwaye ukusebenza kwazo kuphezulu.
WINSOK SOT-323 encapsulation MOSFET
I-MOSFET vs. I-Bipolar Transistor
I-MOSFET sisixhobo esilawulwa yi-voltage, kwaye isango lithatha ngokusisiseko akukho okwangoku, ngelixa i-transistor sisixhobo esilawulwa ngoku, kwaye isiseko kufuneka sithathe i-current ethile. Ke ngoko, xa ireyithingi yangoku yomthombo wesiginali incinci kakhulu, kufuneka i-MOSFET isetyenziswe.
I-MOSFET yi-conductor ye-multi-carrier, ngelixa bobabini abathwali be-transistor bathatha inxaxheba ekuqhubeni. Ekubeni ukuxinana kwabathwali abancinci kunovakalelo kakhulu kwiimeko zangaphandle ezifana nobushushu kunye nemitha, i-MOSFET ifaneleka ngakumbi kwiimeko apho imo engqongileyo itshintsha kakhulu.
Ukongeza ekusetyenzisweni njengezixhobo zeamplifier kunye nokutshintsha okulawulekayo okufana neetransistors, ii-MOSFETs zisenokusetyenziswa njengezichasi eziguquguqukayo ezilawulwa ngumbane.
Umthombo kunye ne-drain ye-MOSFET i-symmetrical ngesakhiwo kwaye inokusetyenziswa ngokutshintshanayo. Amandla ombane wesango lomthombo wendlela yokuncipha I-MOSFET inokuba ntle okanye ingalunganga. Ke ngoko, ukusebenzisa ii-MOSFETs kubhetyebhetye ngakumbi kune-transistors.
Ixesha lokuposa: Oct-13-2023
