Kutshanje, xa abathengi abaninzi beza ku-Olukey ukuza kudibana malunga ne-MOSFETs, baya kubuza umbuzo, indlela yokukhetha i-MOSFET efanelekileyo? Ngokuphathelele lo mbuzo, u-Olukey uya kuwuphendula wonke umntu.
Okokuqala, kufuneka siqonde umgaqo we-MOSFET. Iinkcukacha ze-MOSFET zichazwe ngokweenkcukacha kwinqaku elidlulileyo "Yintoni i-MOS Field Effect Transistor". Ukuba awukacaci, unokufunda ngayo kuqala. Ukubeka nje ngokulula, i-MOSFET yeyecandelo le-Voltage-controlled semiconductor enezibonelelo zokumelana nokufakwa okuphezulu, ingxolo ephantsi, ukusetyenziswa kwamandla aphantsi, uluhlu olukhulu oluguquguqukayo, ukudityaniswa lula, akukho kuphuka kwesibini, kunye noluhlu olukhulu lokusebenza olukhuselekileyo.
Ngoko, kufuneka sikhethe njani okulungileyoI-MOSFET?
1. Ukumisela ukuba ngaba usebenzisa i-N-channel okanye i-P-channel MOSFET
Okokuqala, kufuneka siqale siqonde ukuba sisebenzise i-N-channel okanye i-P-channel MOSFET, njengoko kubonisiwe ngezantsi:
Njengoko kunokubonwa kulo mzobo ungasentla, kukho umahluko ocacileyo phakathi kwe-N-channel kunye ne-P-channel MOSFETs. Ngokomzekelo, xa i-MOSFET isekelwe kwaye umthwalo uqhagamshelwe kumbane wesebe, i-MOSFET yenza i-high-voltage side switch. Ngeli xesha, i-N-channel MOSFET kufuneka isetyenziswe. Ngokwahlukileyo, xa i-MOSFET iqhagamshelwe ebhasini kwaye umthwalo uphantsi, iswitshi yecala eliphantsi isetyenziswa. Ii-MOSFET zamatshaneli e-P zisetyenziswa ngokubanzi kwi-topology ethile, ekwangenxa yengqwalasela ye-voltage drive.
2. I-voltage eyongezelelweyo kunye ne-extra current ye-MOSFET
(1). Qinisekisa amandla ombane ongezelelweyo afunwa yi-MOSFET
Okwesibini, siya kuphinda sigqibe amandla ombane ongezelelweyo ofunekayo kwi-voltage drive, okanye owona mbane uphezulu onokuwamkela isixhobo. Okukhona mkhulu amandla ombane ongezelelweyo weMOSFET. Oku kuthetha ukuba ubukhulu beemfuno ze-MOSFETVDS kufuneka zikhethwe, kubaluleke kakhulu ukwenza imilinganiselo eyahlukeneyo kunye nokhetho olusekelwe kumbane ophezulu onokuvunyelwa yi-MOSFET. Ngokuqinisekileyo, ngokubanzi, izixhobo eziphathwayo yi-20V, umbane we-FPGA yi-20 ~ 30V, kunye ne-85 ~ 220VAC yi-450 ~ 600V. I-MOSFET eveliswe yi-WINSOK inamandla okumelana nombane kunye noluhlu olubanzi lwezicelo, kwaye ithandwa luninzi lwabasebenzisi. Ukuba unazo naziphi na iimfuno, nceda uqhagamshelane nenkonzo yabathengi be-intanethi.
(2) Misela ixesha elongezelelweyo elifunwa yi-MOSFET
Xa iimeko zombane ezilinganisiweyo nazo zikhethiwe, kuyimfuneko ukumisela umlinganiselo wangoku ofunwa yi-MOSFET. Into ebizwa ngokuba yi-current rated current ngokwenene iphezulu yangoku ukuba umthwalo we-MOS unokumelana naphantsi kwayo nayiphi na imeko. Ngokufana nemeko ye-voltage, qiniseka ukuba i-MOSFET oyikhethayo inokusingatha isixa esithile sangoku esongezelelweyo, nokuba inkqubo ivelisa i-spikes yangoku. Iimeko ezimbini zangoku ekufuneka ziqwalaselwe ziipateni eziqhubekayo kunye ne-pulse spikes. Kwimo eqhubekayo yokuqhuba, i-MOSFET ikwimo ezinzileyo, xa i-current iqhubeka nokuhamba ngesixhobo. I-Pulse spike ibhekisa kumthamo omncinci wotyando (okanye incopho yangoku) ehamba kwisixhobo. Nje ukuba ubuninzi bangoku obukhoyo bumiselwe, kufuneka ukhethe kuphela isixhobo esinokumelana nowona mzuzu uphezulu.
Emva kokukhetha umbane owongezelelweyo, ukusetyenziswa komqhubi kufuneka kuthathelwe ingqalelo. Kwiimeko zokwenyani, i-MOSFET ayisosixhobo sokwenyani kuba amandla e-kinetic asetyenziswa ngexesha lenkqubo yokuqhuba ubushushu, ebizwa ngokuba yilahleko yokuqhuba. Xa i-MOSFET "ivuliwe", isebenza njenge-resistor eguquguqukayo, emiselwa yi-RDS (ON) yesixhobo kwaye itshintsha kakhulu ngomlinganiselo. Ukusetyenziswa kwamandla omatshini kunokubalwa yi-Iload2 × RDS (ON). Ekubeni ukuchasana kokubuya kutshintsha kunye nokulinganisa, ukusetyenziswa kwamandla kuya kutshintsha ngokufanelekileyo. Iphezulu i-voltage ye-VGS esetyenziswa kwi-MOSFET, encinci i-RDS (ON) iya kuba; ngokuchaseneyo, i-RDS(ON) ephezulu iya kuba. Qaphela ukuba i-RDS (ON) ukuxhathisa kuncipha kancinci ngoku. Utshintsho lweqela ngalinye leeparamitha zombane kwi-RDS (ON) resistor inokufumaneka kwitheyibhile yokukhetha imveliso yomenzi.
3. Qinisekisa iimfuno zokupholisa ezifunwa yinkqubo
Umqathango olandelayo oza kugwetywa yimfuno zokutshatyalaliswa kobushushu ezifunwa yinkqubo. Kule meko, iimeko ezimbini ezifanayo kufuneka ziqwalaselwe, ezizezi zimbi kakhulu kunye nemeko yangempela.
Ngokumalunga nokuchithwa kobushushu beMOSFET,Olukeyibeka phambili isisombululo kwimeko embi kakhulu, kuba umphumo othile ufuna umda omkhulu we-inshurensi ukuqinisekisa ukuba inkqubo ayiphumeleli. Kukho idatha yomlinganiselo efuna ukuqwalaselwa kwiphepha ledatha le-MOSFET; ukushisa kwe-junction yesixhobo silingana nomlinganiselo wemeko ephezulu kunye nemveliso yokumelana ne-thermal kunye nokuchithwa kwamandla (iqondo lokushisa elidibeneyo = umlinganiselo wemeko ephezulu + [ukumelana nokushisa × ukuchithwa kwamandla]). Ubuninzi bokuchithwa kwamandla kwenkqubo kunokusombululwa ngokwendlela ethile, efana ne-I2 × RDS (ON) ngenkcazo. Sele sibala ubuninzi bangoku oza kudlula kwisixhobo kwaye singabala i-RDS (ON) phantsi kwemilinganiselo eyahlukeneyo. Ukongeza, ukuchithwa kobushushu bebhodi yesekethe kunye ne-MOSFET yayo kufuneka kuthathelwe ingqalelo.
Ukuqhekeka kweAvalanche kuthetha ukuba amandla ombane angasemva kwinxalenye ye-semi-superconducting idlula elona xabiso liphezulu kwaye yenze indawo enemagnethi eyomeleleyo eyandisa umsinga kwicandelo. Ukunyuka kobukhulu be-chip kuya kuphucula amandla okuthintela ukuwa komoya kwaye ekugqibeleni kuphuculwe ukuzinza komatshini. Ke ngoko, ukukhetha ipakethe enkulu kunokuthintela ngokufanelekileyo i-avalanches.
4. Ukumisela ukusebenza kokutshintsha kweMOSFET
Umqathango wokugqibela kukutshintsha kwendlela yokusebenza kweMOSFET. Zininzi izinto ezichaphazela ukusebenza kokutshintsha kweMOSFET. Eyona nto ibalulekileyo ziiparameters ezintathu ze-electrode-drain, i-electrode-source kunye ne-drain-source. I-capacitor ihlawuliswa rhoqo xa itshintsha, oku kuthetha ukuba ukulahlekelwa kwelahleko kwenzeka kwi-capacitor. Ke ngoko, isantya sokutshintsha kwe-MOSFET siya kuncipha, oko kuchaphazela ukusebenza kakuhle kwesixhobo. Ngoko ke, kwinkqubo yokukhetha i-MOSFET, kuyimfuneko kwakhona ukugweba nokubala ilahleko epheleleyo yesixhobo ngexesha lokutshintsha. Kuyimfuneko ukubala ilahleko ngexesha lokuvula (i-Eon) kunye nelahleko ngexesha lokucima. (Eoff). Amandla ewonke okutshintsha kwe-MOSFET angabonakaliswa ngale equation ilandelayo: Psw = (Eon + Eoff) × ukutshintsha rhoqo. Intlawulo yesango (Qgd) inempembelelo enkulu ekutshintsheni ukusebenza.
Ukushwankathela, ukukhetha i-MOSFET efanelekileyo, isigwebo esihambelanayo kufuneka senziwe kwimiba emine: amandla ombane ongezelelweyo kunye nombane ongezelelweyo we-N-channel MOSFET okanye i-P-channel MOSFET, iimfuno zokutshatyalaliswa kobushushu benkqubo yesixhobo kunye nokusebenza kokutshintsha kwesixhobo. I-MOSFET.
Kuphelele apho namhlanje malunga nendlela yokukhetha i-MOSFET efanelekileyo. Ndiyathemba ukuba ingakunceda.
Ixesha lokuposa: Dec-12-2023
